參數(shù)資料
型號: TPS2103DBVRG4
廠商: TEXAS INSTRUMENTS INC
元件分類: 電源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
封裝: GREEN, PLASTIC, SOT-23, 5PIN
文件頁數(shù): 6/20頁
文件大?。?/td> 456K
代理商: TPS2103DBVRG4
TPS2102, TPS2103
VAUX POWER-DISTRIBUTION SWITCHES
SLVS234A – SEPTEMBER 1999 – REVISED APRIL 2000
14
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
power supply considerations (continued)
switch transition
The n-channel MOSFET on IN1 uses a charge pump to create the gate-drive voltage, which gives the IN1 switch
a rise time of approximately 0.5 ms. The p-channel MOSFET on IN2 has a simpler drive circuit that allows a
rise time of approximately 5
s. Because the device has two switches and a single enable pin, these rise times
are seen as transition times, from IN1 to IN2, or IN2 to IN1, by the output. The controlled transition times help
limit the surge currents seen by the power supply during switching.
thermal protection
Thermal protection provided on the IN1 switch prevents damage to the IC when heavy-overload or short-circuit
faults are present for extended periods of time. The increased dissipation causes the junction temperature to
rise to dangerously high levels. The protection circuit senses the junction temperature of the switch and shuts
it off at approximately 145
°C (TJ). The switch remains off until the junction temperature has dropped
approximately 10
°C. The switch continues to cycle in this manner until the load fault or input power is removed.
undervoltage lockout
An undervoltage lockout function is provided to ensure that the power switch is in the off state at power-up.
Whenever the input voltage falls below approximately 2 V, the power switch quickly turns off. This function
facilitates the design of hot-insertion systems that may not have the capability to turn off the power switch before
input power is removed. Upon reinsertion, the power switch will be turned on with a controlled rise time to reduce
EMI and voltage overshoots.
power dissipation and junction temperature
The low on-resistance on the n-channel MOSFET allows small surface-mount packages, such as SOIC, to pass
large currents. The thermal resistances of these packages are high compared to that of power packages; it is
good design practice to check power dissipation and junction temperature. First, find ron at the input voltage,
and operating temperature. As an initial estimate, use the highest operating ambient temperature of interest and
read ron from Figure 22 or Figure 23. Next calculate the power dissipation using:
P
D +
ron
I2
Finally, calculate the junction temperature:
T
J +
P
D
RqJA ) TA
Where:
TA = Ambient temperature
RθJA = Thermal resistance
Compare the calculated junction temperature with the initial estimate. If they do not agree within a few degrees,
repeat the calculation using the calculated value as the new estimate. Two or three iterations are generally
sufficient to obtain a reasonable answer.
ESD protection
All TPS2102 and TPS2103 terminals incorporate ESD-protection circuitry designed to withstand a 2-kV
human-body-model, 750-V CDM, and 200-V machine-model discharge as defined in MIL-STD-883C.
相關(guān)PDF資料
PDF描述
TPS2103DBV 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
TPS2102DG4 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
TPS2102D 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
TSP2102DBV 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
TPS2102DR 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TPS2103DBVT 功能描述:電源開關(guān) IC - 配電 Dual In/Single Out MOSFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻(最大值):85 mOhms 開啟時間(最大值):400 us 關(guān)閉時間(最大值):20 us 工作電源電壓:3.2 V to 6.5 V 電源電流(最大值): 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
TPS2103DBVTG4 功能描述:電源開關(guān) IC - 配電 Dual In/Single Out MOSFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻(最大值):85 mOhms 開啟時間(最大值):400 us 關(guān)閉時間(最大值):20 us 工作電源電壓:3.2 V to 6.5 V 電源電流(最大值): 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
TPS2104D 功能描述:IC V-AUX POWER DIST SW 8-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份,工業(yè)/汽車,大電流開關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開關(guān):是 延遲時間 - 開啟:100ns 延遲時間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類型:表面貼裝 封裝/外殼:16-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR)
TPS2104DBVR 功能描述:電源開關(guān) IC - 配電 Dual In/Single Out MOSFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻(最大值):85 mOhms 開啟時間(最大值):400 us 關(guān)閉時間(最大值):20 us 工作電源電壓:3.2 V to 6.5 V 電源電流(最大值): 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
TPS2104DBVRG4 功能描述:電源開關(guān) IC - 配電 Dual In/Single Out MOSFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻(最大值):85 mOhms 開啟時間(最大值):400 us 關(guān)閉時間(最大值):20 us 工作電源電壓:3.2 V to 6.5 V 電源電流(最大值): 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5