參數(shù)資料
型號: TPS2048DR
英文描述: Analog IC
中文描述: 模擬IC
文件頁數(shù): 17/22頁
文件大?。?/td> 356K
代理商: TPS2048DR
TPS2010A, TPS2011A, TPS2012A, TPS2013A
POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
17
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 34
2
–50
0
50
100
2.4
UNDERVOLTAGE LOCKOUT
2.5
150
TJ – Temperature –
°
C
2.3
2.2
Start Threshold
Stop Threshold
2.1
VI
APPLICATION INFORMATION
IN
EN
GND
1
0.1
μ
F
2,3
4
5,6,7,8
0.1
μ
F
22
μ
F
Load
OUT
TPS2013A
Power Supply
2.7 V to 5.5 V
Figure 35. Typical Application
power-supply considerations
A 0.01-
μ
F to 0.1-
μ
F ceramic bypass capacitor between IN and GND, close to the device, is recommended.
Placing a high-value electrolytic capacitor on the output and input pins is recommended when the output load
is heavy. This precaution reduces power supply transients that may cause ringing on the input. Additionally,
bypassing the output with a 0.01-
μ
F to 0.1-
μ
F ceramic capacitor improves the immunity of the device to
short-circuit transients.
overcurrent
A sense FET checks for overcurrent conditions. Unlike current-sense resistors, sense FETs do not increase the
series resistance of the current path. When an overcurrent condition is detected, the device maintains a
constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault
is present long enough to activate thermal limiting.
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PDF描述
TPS2051A 0.7A. 2.7-5.5V Single Hi-Side MOSFET. Fault Report. Act-High Enable
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