參數(shù)資料
型號： TPS2031DR
英文描述： PERIPHERAL DRIVER|1 DRIVER|MOS|SOP|8PIN|PLASTIC
中文描述： 外圍設(shè)備驅(qū)動程序| 1驅(qū)動器|馬鞍山|?？苵 8引腳|塑料
文件頁數(shù)： 5/22頁
文件大?。?/td> 356K
代理商： TPS2031DR
TPS2010A, TPS2011A, TPS2012A, TPS2013A
POWER-DISTRIBUTION SWITCHES
SLVS189A – DECEMBER 1998 – REVISED NOVEMBER 1999
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating junction temperature range, V
I(IN)
= 5.5 V,
I
O
= rated current, EN = 0 V (unless otherwise noted)
power switch
PARAMETER
TEST CONDITIONS
TJ = 25
°
C,
TJ = 85
°
C,
TJ = 125
°
C,
TJ = 25
°
C,
TJ = 85
°
C,
TJ = 125
°
C,
TJ = 25
°
C,
TJ = 85
°
C,
TJ = 125
°
C,
TJ = 25
°
C,
TJ = 85
°
C,
TJ = 125
°
C,
TJ = 25
°
C,
RL = 10
TJ = 25
°
C,
RL = 10
TJ = 25
°
C,
RL = 10
TJ = 25
°
C,
RL = 10
MIN
TYP
MAX
UNIT
VI(IN) = 5 V,
VI(IN) = 5 V,
VI(IN) = 5 V,
VI(IN) = 3.3 V,
VI(IN) = 3.3 V,
VI(IN) = 3.3 V,
VI(IN) = 5 V,
VI(IN) = 5 V,
VI(IN) = 5 V,
VI(IN) = 3.3 V,
VI(IN) = 3.3 V,
VI(IN) = 3.3 V,
VI(IN) = 5.5 V,
CL = 1
μ
F,
VI(IN) = 2.7 V,
CL = 1
μ
F,
VI(IN) = 5.5 V,
CL = 1
μ
F,
VI(IN) = 2.7 V,
CL = 1
μ
F,
IO = 1.5 A
IO = 1.5 A
IO = 1.5 A
IO = 1.5 A
IO = 1.5 A
IO = 1.5 A
IO = 0.18 A
IO = 0.18 A
IO = 0.18 A
IO = 0.18 A
IO = 0.18 A
IO = 0.18 A
33
36
38
46
44
50
37
41
43
52
rDS(on)
Static drain-source on-state resistance
51
61
m
30
34
35
41
39
47
33
37
39
46
44
56
tr
Rise time output
Rise time, output
6.1
ms
8.6
tf
Fall time output
Fall time, output
3.4
ms
3
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
enable input (EN)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIH
High-level input voltage
2.7 V
≤
VI(IN)
≤
5.5 V
4.5 V
≤
VI(IN)
≤
5.5 V
2.7 V
≤
VI(IN)
≤
4.5 V
EN = 0 V or EN = VI(IN)
CL = 100
μ
F, RL = 10
CL = 100
μ
F, RL = 10
2
V
VIL
Low-level input voltage
Low-level in ut voltage
0.8
V
0.5
II
Input current
–0.5
0.5
μ
A
ton
toff
Turnon time
Turnoff time
20
40
ms
current limit
PARAMETER
TEST CONDITIONS
MIN
0.22
TYP
0.3
MAX
0.4
UNIT
TPS2010A
IOS
Short circuit output current
Short-circuit output current
TJ = 25
°
C, VI = 5.5 V,
OUT connected to GND,
Device enable into short circuit
TPS2011A
0.66
0.9
1.1
A
TPS2012A
TPS2013A
1.1
1.65
1.5
2.2
1.8
2.7
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
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