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參數(shù)資料
| 型號： | TPS-10L |
| 元件分類： | 保險絲 |
| 英文描述： | Fuse |
| 中文描述： | 保險絲 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 34K |
| 代理商： | TPS-10L |
12-28-98
SB98107
Rev. A
Bussmann
Telpower
1 to 70 Amps, 170 Volts DC
Fuses
TPS
1,000
100
10
1
.1
.01
T
1
1
1
1
1
CURRENT IN AMPERES
1
3
5
6
1
1
22
3
45
3
6
7
AMPERE
RATING
Time-Current Characteristic Curve
The only controlled copy of this BIF document is the electronic read-only version located on the Bussmann Network Drive. All other copies of this BIF document are by definition uncontrolled. This bulletin is intend-
ed to clearly present comprehensive product data and provide technical information that will help the end user with design applications. Bussmann reserves the right, without notice, to change design or construc-
tion of any products and to discontinue or limit distribution of any products. Bussmann also reserves the right to change or update, without notice, any technical information contained in this bulletin. Once a prod-
uct has been selected, it should be tested by the user in all possible applications.
Form No. TPS
Page 2 of 2
BIF Doc #5009
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TPS-1L | Fuse |
| TPS-2 | Fuse |
| TPS-20 | Fuse |
| TPS-25 | Fuse |
| TPS-2L | Fuse |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPS1100 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |
| TPS1100D | 功能描述:MOSFET MOSFET 10ns RT RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPS1100DG4 | 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPS1100DR | 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPS1100DRG4 | 功能描述:MOSFET Single P-Ch Enh-Mode MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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