參數(shù)資料
型號： TPIC6E261NE
英文描述： Addressable D-Type Latch
中文描述： 尋址D型鎖存器
文件頁數(shù)： 4/9頁
文件大?。?/td> 142K
代理商： TPIC6E261NE
TPIC6595
POWER LOGIC 8-BIT SHIFT REGISTER
SLIS010A
–
APRIL 1992
–
REVISED OCTOBER 1995
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
recommended operating conditions over recommended operating temperature range (unless
otherwise noted)
MIN
MAX
UNIT
Logic supply voltage, VCC
High-level input voltage, VIH
Low-level input voltage, VIL
Pulsed drain output current, TC = 25
°
C, VCC = 5 V (see Notes 3 and 5)
Setup time, SER IN high before SRCK
↑
, tsu (see Figure 2)
Hold time, SER IN high after SRCK
↑
, th (see Figure 2)
Pulse duration, tw (see Figure 2)
Operating case temperature, TC
4.5
5.5
V
0.85 VCC
V
0.15 VCC
1.5
V
–
1.8
A
10
ns
10
ns
20
ns
°
C
–
40
125
electrical characteristics, V
CC
= 5 V, T
C
= 25
°
C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSX
VSD
Drain-source breakdown voltage
ID = 1 mA
IF = 250 mA,
IOH =
–
20 mA, VCC = 4.5 V
IOH =
–
4 mA, VCC = 4.5 V
IOH = 20 mA,
IOH = 4 mA,
VDS = 15 V
VCC = 5.5 V,
VCC = 5.5 V,
IO = 0,
fSRCK = 5 MHz, IO = 0, CL = 30 pF,
See Figures 1, 2, and 6
45
V
Source-drain diode forward voltage
See Note 3
0.85
1
V
VOH
High-level output voltage,
SER OUT
4.4
4.49
V
g ,
4.1
4.3
VOL
Low-level output voltage, SER
OUT
VCC = 4.5 V
VCC = 4.5 V
0.002
0.1
V
g ,
0.2
0.4
V(hys)
IIH
IIL
ICCL
Input hysteresis
1.3
V
μ
A
μ
A
μ
A
High-level input current
VI = VCC
VI = 0
All inputs low
1
Low-level input current
–
1
Logic supply current
15
100
ICC(FRQ)
Logic supply current frequency
0.6
5
mA
IN
Nominal current
VDS(on) = 0.5 V,
IN = ID,
VDS = 40 V
VDS = 40 V,
ID = 250 mA,
ID = 250 mA,
VCC = 4.5 V
ID = 500 mA,
TC = 85
°
C
See Notes 5, 6, and 7
250
mA
IDSX
Off state drain current
Off-state drain current
0.05
1
μ
A
TC = 125
°
C
VCC = 4.5 V
TC = 125
°
C,
0.15
5
1.3
2
rDS(on)
Static drain-source on-state
resistance
See Notes 5 and 6
and Figures 9 and 10
2
3.2
VCC = 4.5 V
1.3
2
switching characteristics, V
CC
= 5 V, T
C
= 25
°
C
PARAMETER
TEST CONDITIONS
MIN
TYP
650
MAX
UNIT
ns
tPLH
tPHL
tr
tf
ta
trr
NOTES:
Propagation delay time, low-to-high-level output from G
Propagation delay time, high-to-low-level output from G
CL = 30 pF,
See Figures 1 and 2
ID = 250 mA,
150
ns
Rise time, drain output
750
ns
Fall time, drain output
425
ns
Reverse-recovery-current rise time
IF = 250 mA,
See Notes 5 and 6 and Figure 3
di/dt = 20 A/
s,
100
ns
Reverse-recovery time
3. Pulse duration
≤
100
μ
s, duty cycle
≤
2%
5. Technique should limit TJ
–
TC to 10
°
C maximum.
6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
7. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a
voltage drop of 0.5 V at TC = 85
°
C.
μ
,
300
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