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參數(shù)資料
| 型號(hào)： | TPIC6B273DWR |
| 英文描述： | 1-Bit D-Type Latch |
| 中文描述： | 1位D型鎖存器 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | TPIC6B273DWR |
TPIC6595
POWER LOGIC 8-BIT SHIFT REGISTER
SLIS010A
–
APRIL 1992
–
REVISED OCTOBER 1995
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
schematic of inputs and outputs
EQUIVALENT OF EACH INPUT
TYPICAL OF ALL DRAIN OUTPUTS
VCC
Input
LGND
PGND
DRAIN
45 V
12 V
25 V
12 V
LGND
absolute maximum ratings over recommended operating case temperature range (unless
otherwise noted)
Logic supply voltage, V
CC
(see Note 1)
Logic input voltage range, V
I
Power DMOS drain-to-source voltage, V
DS
(see Note 2)
Continuous source-drain diode anode current
Pulsed source-drain diode anode current
Pulsed drain current, each output, all outputs on, I
Dn,
T
A
= 25
°
C (see Note 3)
Continuous drain current, each output, all outputs on, I
Dn,
T
A
= 25
°
C
Peak drain current single output, I
DM,
T
A
= 25
°
C (see Note 3)
Single-pulse avalanche energy, E
AS
(see Note 4)
Avalanche current, I
AS
(see Note 4)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating virtual junction temperature range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–
0.3 V to 7 V
45 V
1 A
2 A
750 mA
250 mA
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2 A
75 mJ
1 A
See Dissipation Rating Table
–
40
°
C to 150
°
C
–
65
°
C to 150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
260
°
C
Stresses beyond those listed under
“
absolute maximum ratings
”
may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under
“
recommended operating conditions
”
is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. All voltage values are with respect to LGND and PGND.
2. Each power DMOS source is internally connected to PGND.
3. Pulse duration
≤
100
μ
s, duty cycle
≤
2 %
4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25
°
C, L = 100 mH, IAS = 1 A (see Figure 4).
DISSIPATION RATING TABLE
PACKAGE
TA
≤
25
°
C
POWER RATING
DERATING FACTOR
ABOVE TA = 25
°
C
9.0 mW/
°
C
9.2 mW/
°
C
TA = 125
°
C
POWER RATING
DW
1125 mW
225 mW
N
1150 mW
230 mW
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