參數(shù)資料
型號: TPIC6259DWR
英文描述: Addressable D-Type Latch
中文描述: 尋址D型鎖存器
文件頁數(shù): 3/9頁
文件大小: 142K
代理商: TPIC6259DWR
TPIC6595
POWER LOGIC 8-BIT SHIFT REGISTER
SLIS010A
APRIL 1992
REVISED OCTOBER 1995
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
schematic of inputs and outputs
EQUIVALENT OF EACH INPUT
TYPICAL OF ALL DRAIN OUTPUTS
VCC
Input
LGND
PGND
DRAIN
45 V
12 V
25 V
12 V
LGND
absolute maximum ratings over recommended operating case temperature range (unless
otherwise noted)
Logic supply voltage, V
CC
(see Note 1)
Logic input voltage range, V
I
Power DMOS drain-to-source voltage, V
DS
(see Note 2)
Continuous source-drain diode anode current
Pulsed source-drain diode anode current
Pulsed drain current, each output, all outputs on, I
Dn,
T
A
= 25
°
C (see Note 3)
Continuous drain current, each output, all outputs on, I
Dn,
T
A
= 25
°
C
Peak drain current single output, I
DM,
T
A
= 25
°
C (see Note 3)
Single-pulse avalanche energy, E
AS
(see Note 4)
Avalanche current, I
AS
(see Note 4)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating virtual junction temperature range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.3 V to 7 V
45 V
1 A
2 A
750 mA
250 mA
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2 A
75 mJ
1 A
See Dissipation Rating Table
40
°
C to 150
°
C
65
°
C to 150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
260
°
C
Stresses beyond those listed under
absolute maximum ratings
may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other conditions beyond those indicated under
recommended operating conditions
is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES:
1. All voltage values are with respect to LGND and PGND.
2. Each power DMOS source is internally connected to PGND.
3. Pulse duration
100
μ
s, duty cycle
2 %
4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25
°
C, L = 100 mH, IAS = 1 A (see Figure 4).
DISSIPATION RATING TABLE
PACKAGE
TA
25
°
C
POWER RATING
DERATING FACTOR
ABOVE TA = 25
°
C
9.0 mW/
°
C
9.2 mW/
°
C
TA = 125
°
C
POWER RATING
DW
1125 mW
225 mW
N
1150 mW
230 mW
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