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參數(shù)資料
| 型號： | TPC8105-H |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 475K |
| 代理商： | TPC8105-H |
TPC8105-H
2002-01-18
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
R
th (ch-a)
52.1
°C/W
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
R
th (ch-a)
125
°C/W
Marking
(Note 5)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
(a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: V
DD
=
24 V, T
ch
= 25°C (initial), L = 1.0 mH, R
G
= 25
, I
AR
=
7 A
Note 4: Reptitve rating; pulse width limited by maximum channel temperature.
Note 5:
on lower left of the marking indicates Pin 1.
shows Lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: january to december are denoted by letters A to L respectively)
Type
TPC8105
H
(a)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
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