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參數(shù)資料
| 型號(hào)： | TP5322_07 |
| 廠商： | Supertex, Inc. |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | P通道增強(qiáng)模式垂直的DMOS場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 525K |
| 代理商： | TP5322_07 |
2
TP5322
Electrical Characteristics
Symbol
Parameter
BV
DSS
V
GS(TH)
ΔV
GS(TH)
I
GSS
Min
-220
-1.0
-
-
-
Typ
-
-
-
-
-
Max
-
-2.4
4.5
-100
-10
Units
V
V
mV/
O
C
nA
μA
Conditions
V
GS
= 0V, I
D
= -2.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= ±20V, V
DS
= 0V
V
DS
= Max rating, V
GS
= 0V
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= -10V, V
DS
= -25V
V
GS
= -4.5V, I
D
= -100mA
V
GS
= -10V, I
D
= -200mA
V
GS
= -10V, I
D
= -200mA
V
DS
= -25V, I
D
= -200mA
V
GS
= 0V,
V
= -25V,
f = 1MHz
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(TH)
with temperature
Gate body leakage current
I
D(SS)
Zero gate voltage drain current
-
-
-1.0
mA
I
D(ON)
ON-state drain current
-0.7
-
-0.95
10
8.0
-
250
-
A
R
DS(ON)
Static drain-to-source ON-state
resistance
15
12
1.7
-
110
45
20
10
15
20
15
-1.8
-
Ω
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1.All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300μs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
-
%/
O
C
mmho
100
-
-
-
-
-
-
-
-
-
pF
-
-
-
-
-
ns
V
DD
= -25V,
I
D
R
GEN
= 25,
V
ns
V
GS
= 0V, I
SD
= -0.5A
V
GS
= 0V, I
SD
= -0.5A
300
Thermal Characteristics
Package
I
(continuous)
1
-0.12A
-0.26A
I
(pulsed)
-0.70A
-0.90A
Power Dissipation
@T
C
= 25
O
C
0.36W
1.6W
2
Θ
jc
(
O
C/W)
Θ
jc
(
O
C/W)
I
DR
1
I
DRM
TO-236AB
TO-243AA
Notes:
1. I
(continuous) is limited by max rated T
.
2. Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
200
15
350
78
2
-0.12A
-0.26A
-0.7A
-0.9A
Switching Waveforms and Test Circuit
0V
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
Output
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
V
DD
R
GEN
0V
-10V
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| TP5322 | P-Channel Enhancement-Mode Vertical DMOS FET |
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| TP5322K1-G | P-Channel Enhancement-Mode Vertical DMOS FET |
| TP5322N8 | P-Channel Enhancement-Mode Vertical DMOS FET |
| TP5322N8-G | P-Channel Enhancement-Mode Vertical DMOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TP5322K1 | 功能描述:MOSFET MOSFET PCh ENHANCE MODE -220V 12 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP5322K1-G | 功能描述:MOSFET 220V 12 Ohm 0.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP5322N8 | 功能描述:MOSFET MOSFET PCh ENHANCE MODE -220V 12 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP5322N8-G | 功能描述:MOSFET 220V 12 Ohm 0.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP-53312-3S | 制造商:ACME Electric 功能描述:THREE PHASE, 60 HZ , 480 DELTA PRIMARY VOLTS , 208Y/120 SECONDARY VOLTS, MAY BE |
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