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參數(shù)資料
| 型號： | TP3006 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 125K |
| 代理商： | TP3006 |
1
TP3006
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
The TP3006 is designed for cellular radio base station amplifiers up to 960
MHz. It incorporates high value emitter ballast resistors, gold metallizations and
offers a high degree of reliability and ruggedness. The TP3006 also features
input and output matching networks and high impedances. It can easily operate
in a full 870–960 MHz bandwidth in a simple circuit.
Class AB Operation
Specified 26 Volts, 960 MHz Characteristics
Output Power — 5 Watts
Gain — 9 dB min
Efficiency — 45% min
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCER
VCBO
VEBO
IC
Tstg
TJ
PD
45
Vdc
Collector–Base Voltage
55
Vdc
Emitter–Base Voltage
3.5
Vdc
Collector–Current — Continuous
2
Adc
Storage Temperature Range
– 40 to +100
°
C
Operating Junction Temperature
200
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
25
0.14
Watts
W/
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
R
θ
JC
7
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 15 mA, RBE = 75
)
V(BR)CER
45
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 4 mAdc)
V(BR)EBO
3.5
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 15 mAdc)
V(BR)CBO
55
—
—
Vdc
Collector–Emitter Leakage
(VCE = 26 V, RBE = 75
)
ICER
—
—
4
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc)
hFE
15
—
100
—
NOTE:
(continued)
1. Thermal resistance is determined under specified RF operating condition at temperature test point (see drawing of the package).
Order this document
by TP3006/D
SEMICONDUCTOR TECHNICAL DATA
5 W, 870–960 MHz
RF POWER TRANSISTOR
NPN SILICON
CASE 319–07, STYLE 2
REV 6
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