參數(shù)資料
型號： TP2522N8-G
廠商： SUPERTEX INC
元件分類： 功率晶體管
英文描述： P-Channel Enhancement Mode Vertical DMOS FETs
中文描述： 0.26 A, 220 V, 12 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA
封裝： GREEN PACKAGE-3
文件頁數(shù)： 2/5頁
文件大?。?/td> 581K
代理商： TP2522N8-G
2
TP2522
Thermal Characteristics
Package
I
(continuous)*
(mA)
-260
I
(pulsed)
(A)
-2.0
Power Dissipation
@ T
A
= 25
O
C
(W)
1.6
θ
jc
O
C/W
θ
j
a
O
C/W
I
DR
*
(mA)
I
DRM
(A)
TO-243AA (SOT-89)
15
78
-260
-2.0
* I
(continuous) is limited by max rated T
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm.
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
Output
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
GEN
0V
-10V
Symbol
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage
Min
-220
-1.0
-
-
Typ
-
-
-
-
-
Max
-
-2.4
4.5
-100
-10
Units
V
V
mV/
O
C
nA
μA
Conditions
V
GS
= 0V, I
D
= -2.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating,
T
A
= 125°C
V
GS
= -4.5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -4.5V, I
D
= -100mA
V
GS
= -10V, I
D
= -200mA
V
GS
= -10V, I
D
= -200mA
V
DS
= -25V, I
D
= -200mA
V
GS
= 0V,
V
= -25V,
f = 1.0 MHz
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
I
DSS
Zero gate voltage drain current
-
-
-1.0
mA
I
D(ON)
ON-state drain current
-0.25
-0.75
-0.7
-2.1
10
8.0
-
250
75
20
10
-
-
-
-
-
300
-
-
A
R
DS(ON)
Static drain-to-source ON-State
resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
Diode forward voltage drop
Reverse recovery time
-
15
12
1.7
-
125
85
35
10
15
20
15
-1.8
-
Ω
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
(1) All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300μs pulse, 2% duty cycle.)
(2) All A.C. parameters sample tested.
-
%/
O
C
mmho
100
-
-
-
-
-
-
-
-
-
pF
ns
V
DD
= -25V,
I
D
R
GEN
= 25
V
ns
V
GS
= 0V, I
SD
= -0.5A
V
GS
= 0V, I
SD
= -0.5A
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