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參數(shù)資料
| 型號(hào)： | TP2510N8-G |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs |
| 中文描述： | 0.48 A, 100 V, 3.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-243AA |
| 封裝： | GREEN PACKAGE-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 558K |
| 代理商： | TP2510N8-G |
TP2510
Features
Low threshold — -2.4V max.
High input impedance
Low input capacitance — 125pF max.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N and P-channel devices
Applications
Logic level interfaces — ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
General Description
These low threshold enhancement-mode (normally-off) tran-
sistors utilize a vertical DMOS structure and Supertex’s well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
widerange of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Switching Waveforms and Test Circuit
0V
Low Threshold
P-Channel Enhancement Mode
Vertical DMOS FETs
Thermal Characteristics
Package
I
continuous
(mA)
-480
I
pulsed
(A)
-2.5
Power Dissipation
@ T
A
= 25
O
C
(W)
1.6
θ
jc
(
O
C/W)
θ
jc
(
O
C/W)
I
DR
(mA)
I
DRM
(A)
TO-243AA
I
(continuous) is limited by max rated T
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm.
15
78
-480
-2.5
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
Output
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
V
DD
R
GEN
0V
-10V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TP2510 | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-100V，低門限2.4V，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| TP2510 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2510N8 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2510ND | P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2520N8 | SMD GRAB CLIP-BANAN PLUG 12 RED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TP2510ND | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs |
| TP251NR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| TP2520 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs |
| TP2520_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:P-Channel Enhancement Mode Vertical DMOS FETs |
| TP2520N8 | 功能描述:MOSFET 200V 12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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