參數(shù)資料
型號(hào): TP2314
廠商: ADVANCED SEMICONDUCTOR INC
元件分類(lèi): 功率晶體管
英文描述: NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述: VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
封裝: TO-39(CE), 3 PIN
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 32K
代理商: TP2314
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
BV
CEO
I
C
= 10 mA
18
V
BV
CES
I
C
= 5.0 mA
36
V
BV
CBO
I
C
= 5.0 mA
36
V
I
CBO
V
CB
= 15 V
250
m
A
BV
EBO
I
E
= 1.0 mA
4.0
V
h
FE
V
CE
= 5.0 V I
C
= 250 mA
5.0
---
C
ob
V
CB
= 15 V
f = 1.0 MHz
20
pF
G
PE
h
V
CC
= 12.5 V P
out
= 40 W
f = 175 MHz
50
0.1
W
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
TP2314
DESCRIPTION:
The
TP2314
is a High Frequency
Transistor Designed for Large Signal
Power Amplifier Applications, With
Emitter Grounded to Case.
MAXIMUM RATINGS
I
1.0 A
V
18 V
P
DISS
8.0 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +200
O
C
22
O
C/W
T
J
T
STG
q
JC
PACKAGE STYLE TO-39 (CE)
1 = COLLECTOR 2 = BASE
3 = EMITTER
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