參數(shù)資料
型號(hào)： TP0610T
廠商： Vishay Intertechnology,Inc.
英文描述： P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-60V，夾斷電流-0.12A的P溝道增強(qiáng)型MOSFET晶體管)
中文描述： P通道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓- 60V的，夾斷電流，0.12A的P溝道增強(qiáng)型MOSFET的晶體管）
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 96K
代理商： TP0610T
TP0610L/T, VP0610L/T, BS250
Siliconix
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S-52426—Rev. E, 14-Apr-97 Siliconix was formerly a division of TEMIC Semiconductors
Phone (408)988-8000
FaxBack (408)970-5600
www.siliconix.com
1
P-Ch Enhancement-Mode MOSFET Transistors
TP0610L
–60
10 @ V
GS
= –10 V
10 @ V
GS
= –10 V
10 @ V
GS
= –10 V
10 @ V
GS
= –10 V
14 @ V
GS
= –10 V
–1 to –2.4
–0.18
TP0610T
–60
–1 to –2.4
–0.12
VP0610L
–60
–1 to –3.5
–0.18
VP0610T
–60
–1 to –3.5
–0.12
BS250
–45
–1 to –3.5
–0.18
High-Side Switching
Low On-Resistance: 8
Low Threshold: –1.9 V
Fast Switching Speed: 16 ns
Low Input Capacitance: 15 pF
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Switching
Easily Driven Without Buffer
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
TP0610T (T0)*
VP0610T (V0)*
*Marking Code for TO-236
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
BS250
TP0610L
VP0610L
Drain-Source Voltage
V
DS
V
GS
–60
–60
–60
–60
–45
V
Gate-Source Voltage
30
30
30
30
25
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
T
A
= 100 C
D
I
–0.18
–0.12
–0.18
–0.12
–0.18
–0.11
–0.07
–0.11
–0.07
A
Pulsed Drain Current
A
I
DM
–0.8
–0.4
–0.8
–0.4
Power Dissipation
Power Dissi ation
T
A
= 25 C
T
A
= 100 C
P
D
0.8
0.36
0.8
0.36
0.83
W
0.32
0.14
0.32
0.14
Maximum Junction-to-Ambient
R
thJA
T
J
, T
stg
156
350
156
350
150
C/W
Operating Junction & Storage Temperature Range
–55 to 150
C
Notes
A.
Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70209.
Applications information may also be obtained via FaxBack, request document #70611.
相關(guān)PDF資料
PDF描述
TP0610T P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-61V，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
TP0620 P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-200V，低門(mén)限2.4V，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TP0610T-G 功能描述:MOSFET -60V 100hm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TP0610TT1 制造商:SILICONIX 功能描述:*
TP0610T-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 60V 0.12A 3-Pin TO-236 T/R
TP0620 制造商:SUPERTEX 制造商全稱(chēng):SUPERTEX 功能描述:P-Channel Enhancement-Mode Vertical DMOS FETs
TP0620N3 功能描述:MOSFET 200V 12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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