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參數(shù)資料
| 型號： | TP0610KL |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 60-V (D-S) MOSFET |
| 中文描述： | P通道60 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 82K |
| 代理商： | TP0610KL |
FEATURES
TrenchFET Power MOSFET
ESD Protected: 2000 V
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control
TP0610KL/BS250KL
Vishay Siliconix
New Product
Document Number: 72712
S-40244—Rev. A, 16-Feb-04
www.vishay.com
1
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS(min)
(V)
r
DS(on)
( )
6 @ V
GS
=
10 V
V
GS(th)
(V)
I
D
(A)
1 to 3 0
3.0
0.27
60
10 @ V
GS
=
4.5 V
0.21
Ordering Information: TP0610KL-TR1
1
TO-226AA
(TO-92)
Top View
S
D
G
2
3
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
“S” TP
0610KL
xxyy
Device Marking
Front View
“S” = Siliconix Logo
xxyy
= Date Code
Device Marking
Front View
“S” BS
250KL
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
D
S
G
100
Ordering Information: BS250KL-TR1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
T
A
= 25 C
I
D
0.27
T
A
= 70 C
0.22
A
Pulse Drain Current
a
I
DM
1.0
Power Dissipation
T
A
= 25 C
0.8
W
T
A
= 70 C
P
D
0.51
Maximum Junction-to-Ambient
R
thJA
156
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TP0610K | P-Channel 60-V (D-S) MOSFET |
| TP0610L | CONNECTOR ACCESSORY |
| TP0610T | CONNECTOR ACCESSORY |
| TP0610T | CONNECTOR ACCESSORY |
| TP0610L | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-60V，夾斷電流-0.18A的P溝道增強(qiáng)型MOSFET晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TP0610KL-TR1 | 功能描述:MOSFET 60V 0.27A 0.8W 10ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0610KL-TR1-E3 | 功能描述:MOSFET 60V 0.27A 0.8W 10ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0610K-T1 | 功能描述:MOSFET 60V 0.185A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0610K-T1-E3 | 功能描述:MOSFET 60V 0.185A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TP0610K-T1-GE3 | 功能描述:MOSFET 60V 0.185A 350mW 10ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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