參數(shù)資料
型號： TP0202T-T1
英文描述： TRANSISTOR SOT23 SMD MOSFET
中文描述： 晶體管SOT23封裝貼片MOSFET的
文件頁數(shù)： 2/4頁
文件大小： 51K
代理商： TP0202T-T1
TP0202T
2
Siliconix
S-44505—Rev. E, 06-Sep-94
Specifications
a
Limits
Parameter
Symbol
Test Conditions
Min
Typ
b
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= –10 A
–20
–25
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –0.25 mA
–1.3
–2.1
–3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –16 V, V
GS
= 0 V
–1
A
T
J
=
–10
On-State Drain Current
c
I
D(on)
V
DS
= –10 V, V
GS
= –10 V
–0.5
–0.75
A
Drain-Source On-Resistance
c
r
DS(on)
V
GS
= –4.5 V, I
D
= –0.05 A
1.7
3.5
V
GS
= –10 V, I
D
= –0.2 A
0.9
1.4
Forward Transconductance
c
g
fs
V
DS
= –10 V, I
D
= –0.2 A
250
600
mS
Diode Forward Voltage
V
SD
I
S
= –0.25 A, V
GS
= 0 V
–0.9
–1.5
V
Dynamic
Total Gate Charge
Q
g
2700
Gate-Source Charge
Q
gs
V
DS
–16 V, V
GS
=–10 V, I
D
–200 mA
500
pC
Gate-Drain Charge
Q
gd
600
Input Capacitance
C
iss
55
Output Capacitance
C
oss
V
DS
= –15 V, V
GS
= 0 V, f = 1 MHz
50
pF
Reverse Transfer Capacitance
C
rss
18
Switching
d
Turn-On Time
t
d(on)
8
12
t
r
–15
–0.2
20
30
ns
Turn-Off Time
t
d(off)
20
35
t
f
30
40
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VPBP02
2%.
相關PDF資料
PDF描述
TP10L10 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-225VAR
TP10L20 TRANSISTOR | BJT | DARLINGTON | NPN | 200V V(BR)CEO | 10A I(C) | TO-225VAR
TP10S8 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-127VAR
TP10W45FX Pushbutton Switch,RIGHT ANGLE,SPDT,ON-(ON),PC TAIL Terminal,PCB Hole Count:5
TP13057BJ Pushbutton Switch; Illumination:Non-Illuminated; Actuator Style:Square; Actuator Diameter:0.122"; Circuitry:SPDT; Switch Operation:On-(On); Switch Terminals:Solder Lug; Contact Current Max:6A; Actuator Color:Black RoHS Compliant: Yes
相關代理商/技術參數(shù)
參數(shù)描述
TP0205A 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET, Low-Threshold
TP0205AD 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET, Low-Threshold
TP0205AD-T1 功能描述:MOSFET 20V 0.10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TP0205A-T1 功能描述:MOSFET RO 781-SI1303DL-E3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TP0206-100K 制造商:MISCELLANEOUS 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*