參數(shù)資料
    型號(hào)： TP0202K-T1-E3
    廠商： Vishay Intertechnology,Inc.
    元件分類(lèi)： 功率晶體管
    英文描述： P-Channel 30-V (D-S) MOSFET
    中文描述： P溝道30V的MOSFET
    文件頁(yè)數(shù)： 1/4頁(yè)
    文件大?。?/td> 62K
    代理商： TP0202K-T1-E3
    TP0202K
    Vishay Siliconix
    Document Number: 71609
    S-41777—Rev. D, 04-Oct-04
    www.vishay.com
    1
    P-Channel 30-V (D-S) MOSFET
    PRODUCT SUMMARY
    V
    (BR)DSS(min)
    (V)
    r
    DS(on)
    ( )
    V
    GS(th)
    (V)
    I
    D
    (mA)
    Q
    g
    (Typ)
    1.4 @ V
    GS
    =
    10 V
    3.5 @ V
    GS
    =
    4.5 V
    1.3 to
    3.0
    385
    1000
    30
    1.3 to
    3.0
    240
    FEATURES
    BENEFITS
    APPLICATIONS
    High-Side Switching
    Low On-Resistance: 1.2
    (typ)
    Low Threshold:
    2.0 V (typ)
    Fast Swtiching Speed: 14 ns (typ)
    Low Input Capacitance: 31 pF (typ)
    Gate-Source ESD Protection
    Ease in Driving Switches
    Low Offset (Error) Voltage
    Low-Voltage Operation
    High-Speed Circuits
    Easily Driven Without Buffer
    Drivers: Relays, Solenoids, Lamps, Hammers,
    Displays, Memories, Transistors, etc.
    Battery Operated Systems
    Power Supply Converter Circuits
    Solid State Relays
    Marking Code: 2K
    wll
    2K = Part Number Code for TP0202K
    w
    = Week Code
    ll
    = Lot Traceability
    Ordering Information:
    TP0202K-T1
    TP0202K-T1—E3 (Lead (Pb)-Free)
    TO-236
    (SOT-23)
    Top View
    2
    1
    S
    D
    G
    3
    ABSOLUTE MAXIMUM RATINGS (T
    A
    = 25 C UNLESS OTHERWISE NOTED)
    Parameter
    Symbol
    Limit
    Unit
    Drain-Source Voltage
    V
    DS
    30
    V
    Gate-Source Voltage
    V
    GS
    20
    Continuous Drain Current (T
    J
    = 150 C)
    a
    T
    A
    = 25 C
    I
    D
    385
    T
    A
    = 85 C
    280
    mA
    Pulse Drain Current
    b
    I
    DM
    750
    Power Dissipation
    a
    T
    A
    = 25 C
    350
    mW
    T
    A
    = 85 C
    P
    D
    185
    Maximum Junction-to-Ambient
    a
    R
    thJA
    350
    C/W
    Operating Junction and Storage Temperature Range
    T
    J
    , T
    stg
    55 to 150
    C
    Notes
    a.
    b.
    Surface mounted on FR4 board.
    Pulse width limited by maximum junction temperature.
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    TP0202K-T1-E3 制造商:Vishay Siliconix 功能描述:P CH MOSFET -30V 385mA TO-236 制造商:Vishay Siliconix 功能描述:P CH MOSFET, -30V, 385mA, TO-236
    TP0202K-T1-GE3 功能描述:MOSFET 30V 0.385A 350mW 3.5ohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
    TP0202T 功能描述:MOSFET 20V 0.41A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
    TP0202T-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 20V 0.41A 3-Pin TO-236 T/R
    TP0205A 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET, Low-Threshold
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