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參數(shù)資料
| 型號(hào)： | TODV640THROUGH1240 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ALTERNISTORS |
| 中文描述： | 交變 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | TODV640THROUGH1240 |
TODV 640 ---> 1240
March 1995
ALTERNISTORS
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360
°
conduction angle)
Tc = 75
°
C
40
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
°
C )
tp = 2.5 ms
590
A
tp = 8.3 ms
370
tp = 10 ms
350
I2t
I2t value
tp = 10 ms
610
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG= 500mA
diG/dt = 1A/
μ
s
Repetitive
F = 50 Hz
20
A/
μ
s
Non
Repetitive
100
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°
C
°
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°
C
RD91
(Plastic)
.
HIGH COMMUTATION : > 142A/ms (400Hz)
.
INSULATINGVOLTAGE= 2500V
(RMS)
(UL RECOGNIZED : EB1734)
.
HIGH VOLTAGECAPABILITY: V
DRM
= 1200V
DESCRIPTION
Symbol
Parameter
TODV
Unit
640
840
1040
1240
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°
C
600
800
1000
1200
V
ABSOLUTE RATINGS
(limiting values)
FEATURES
The TODV 640 ---> 1240 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
A
2
G
A
1
1/5
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