
TN6Q02
No.9030-1/4
Features
Original control IC for Quasi-resonant type.
High voltage Power MOSFET with current sense.
Low input voltage protection (Automatic reset)
Over voltage protection (Latch).
Over current protection (Pulse-by-pulse).
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
unit
[The voltage parameters indicate the GND pin voltage]
Drain-to-Source Voltage
VDSS
3-5
650
V
Drain Current (DC)
ID
3-5
3.8
A
Drain Current (Pulse)
IDP
3-5
PW
≤10s, duty cycle≤1%
11.4
A
VDD Pin Apply Voltage
VDD
4-5
--0.3 to 16.7
V
FB Pin Apply Voltage
VFB
1-5
--0.3 to VDD+0.3
V
EDGE Pin Apply Voltage
VEDGE
2-5
--0.3 to VDD+0.3
V
Allowable Power Dissipation
PD
2W
Tc=25
°C30
W
Operating Temperature
Topr
--25 to +125
°C
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
3-5
70
mJ
Avalanche Current *2
IAV
3-5
3.8
A
*1 VDD=50V, L=10mH, IAV=3.8A
*2 L
≤10mH, single pulse
72606 / 33006 MS IM TB-00002232 / D0505IQ MS IM TB-00001723
TN6Q02
ExPD (Excellent Power Device)
Quasi-Resonant Switching
Power Supply ExPD
Ordering number : EN9030A
SANYO Semiconductors
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