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參數(shù)資料
| 型號(hào)： | TN5415A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | D86 - CONNECTOR ACCESSORY |
| 中文描述： | 100 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 25K |
| 代理商： | TN5415A |
T
Discrete POWE R & Signal
Technologies
PNP High Voltage Amplifier
TN5415A
This device is designed for use as high voltage drivers requiring
collector currents to 100 mA. Sourced from Process 76. See
MPSA92 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
200
4.0
100
V
V
V
mA
°
C
-55 to +150
Symbol
Characteristic
Max
Units
TN5415A
1.0
8.0
125
50
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
W
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
TO-226
CBE
1997 Fairchild Semiconductor Corporation
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| TN5415A_Q | 功能描述:兩極晶體管 - BJT PNP High Voltage amp RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| TN5C060-55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UV-Erasable/OTP PLD |
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