參數(shù)資料
型號： TN3904
英文描述： NPN SILICON PLANAR SWITCHING TRANSISTOR
中文描述： NPN硅平面開關(guān)晶體管
文件頁數(shù)： 1/4頁
文件大小： 98K
代理商： TN3904
NPN SILICON PLANAR SWITCHING TRANSISTOR
TN3904
TO-237
Plastic Package
General Purpose Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T
a
=25oC
Power Dissipation @ T
c
=25oC
@ T
a
=25oC PCB Land Area for
Collector Lead >1 sq inch
@ T
a
=25oC with heat sink
Operating And Storage Junction
Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
T
j
, T
stg
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Thermal Resistance >with PCB land
area for collector lead >1 sq inch
Thermal Resistance Junction to
Ambient with heat sink
R
th (j-c)
R
th (j-a)
R
th (j-a)
R
th (j-a)
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise )
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Base Cut Off Current
Collector Cut Off Current
DC Current Gain
SYMBOL
*V
CEO
V
CBO
V
EBO
I
BL
I
CEX
*h
FE
TEST CONDITION
I
C
=1mA, I
B
=0
I
C
=10
μ
A, I
E
=0
I
E
=10
μ
A, I
C
=0
V
CE
=30V, V
EB(off)
=3V
V
CE
=30V, V
EB(off)
=3V
I
C
=0.1mA, V
CE
=1V
I
C
=1mA, V
CE
=1V
I
C
=10mA, V
CE
=1V
I
C
=50mA, V
CE
=1V
I
C
=100mA, V
CE
=1V
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
MIN
40
60
6
UNIT
V
V
V
nA
nA
40
70
100
60
30
Collector Emitter Saturation Voltage
*V
CE (sat)
V
V
V
V
Base Emitter Saturation Voltage
*V
BE (sat)
0.65
*Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2%
104
oC/W
P
D
0.75
1.5
W
W
1.0
W
1.2
W
0.3
0.85
0.95
0.2
MAX
167
oC/W
50
50
- 55 to +150
oC
125
oC/W
200
mA
83
oC/W
300
VALUE
40
60
6.0
UNIT
V
V
V
EBC
Transys
Electronics
L I
M
I T E
D
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