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參數(shù)資料
| 型號(hào)： | TN2640ND |
| 廠(chǎng)商： | SUPERTEX INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | DIE |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 461K |
| 代理商： | TN2640ND |
TN2640
12/19/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
N-Channel Enhancement-Mode
Vertical DMOS FETs
TN2640
Low Threshold
Features
Low threshold — 2.0V max.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
±
20V
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
*
Distance of 1.6 mm from case for 10 seconds.
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
Note: See Package Outline section for dimensions.
BV
DSS
/
BV
DGS
400V
R
DS(ON)
(max)
V
GS(th)
(max)
I
D(ON)
(min)
SO-8
TO-92
DPAK
Die
5.0
2.0V
2.0A
TN2640LG
TN2640N3
TN2640K4
TN2640ND
MIL visual screening available.
Ordering Information
Order Number / Package
S G D
TO-92
1
2
3
4
8
7
6
5
top view
SO-8
NC
NC
S
G
D
D
D
D
G
S
D (TAB)
TO-252
(D-PAK)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TN4-25702 | D38 - CONNECTOR ACCESSORY |
| TN5325 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓250V，低門(mén)限2.0V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| TN5325 | CONNECTOR ACCESSORY |
| TN5325K1 | CONNECTOR ACCESSORY |
| TN5325N3 | CONNECTOR ACCESSORY |
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