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參數(shù)資料
| 型號(hào)： | TN2540N3 |
| 廠商： | SUPERTEX INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 175 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | SGD, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 93K |
| 代理商： | TN2540N3 |
1/7
MAIN FEATURES:
TN25 and TYNx25 Series
STANDARD
25A SCRs
April 2002 - Ed: 4A
DESCRIPTION
The TYN / TN25 SCR Series is suitable for
general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
Symbol
Value
Unit
I
T(RMS)
25
A
V
DRM
/V
RRM
600 to 1000
V
I
GT
40
mA
ABSOLUTE RATINGS
(limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (180° conduction angle)
Tc = 100°C
25
A
T
(AV)
Average on-state current (180° conduction angle)
Tc = 100°C
16
A
I
TSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25°C
314
A
tp = 10 ms
300
I
2
t
I
2
t Value for fusing
tp = 10 ms
Tj = 25°C
450
A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
F = 60 Hz
Tj = 125°C
50
A/μs
I
GM
Peak gate current
tp = 20 μs
Tj = 125°C
4
A
P
G(AV)
Average gate power dissipation
Tj = 125°C
1
W
T
stg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reverse gate voltage
5
V
A
K
G
D
2
PAK
(TN25-G)
G
A
A
K
TO-220AB
(TYN)
A
A
G
K
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN2540N3-G | 功能描述:MOSFET 400V 12Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN2540N3-G P002 | 制造商:Supertex Inc 功能描述:Trans MOSFET N-CH 400V 0.175A 3-Pin TO-92 T/R 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| TN2540N3-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| TN2540N3-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| TN2540N3-G P013 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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