參數(shù)資料
型號: TN2460T
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel Enhancement-Mode MOSFET(最小漏源擊穿電壓240V,最小夾斷電流51mA的N溝道增強型MOSFET晶體管)
中文描述: N溝道增強型MOSFET(最小漏源擊穿電壓240伏,最小夾斷電流五一毫安的N溝道增強型MOSFET的晶體管)
文件頁數(shù): 1/4頁
文件大小: 71K
代理商: TN2460T
TN2460L/TN2460T
Siliconix
P-37409—Rev. C, 04-Jul-94
1
N-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
Min (mA)
TN2460L
240
60 @ V
GS
= 10 V
0.5 to 1.8
75
TN2460T
60 @ V
GS
= 10 V
0.5 to 1.8
51
Features
Benefits
Applications
Low On-Resistance: 40
Secondary Breakdown Free: 260 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
“Run-Away”
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
Telephone Mute Switches, Ringer Circuits
Power Supply, Converters
Motor Control
TN2460T (T2)*
*Marking Code for TO-236
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
TN2460L
Absolute Maximum Ratings (T
A
= 25 C Unless Otherwise Noted)
Parameter
Symbol
TN2460L
TN2460T
Unit
Drain-Source Voltage
V
DS
240
240
V
Gate-Source Voltage
V
GS
20
20
Continuous Drain Current (T
J
= 150 C)
T
A
= 25 C
I
D
75
51
T
A
= 100 C
48
32
mA
Pulsed Drain Current
a
I
DM
800
400
Power Dissipation
T
A
= 25 C
P
D
0.8
0.36
W
T
A
= 100 C
0.32
0.14
Maximum Junction-to-Ambient
R
thJA
156
350
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70205.
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