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參數(shù)資料
| 型號(hào)： | TN2222A |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR SWITCHING TRANSISTOR |
| 中文描述： | NPN硅平面開(kāi)關(guān)晶體管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | TN2222A |
NPN SILICON PLANAR SWITCHING TRANSISTOR
TN2222A
TO-237
Plastic Package
For use as a Medium Power Amplifier
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T
a
=25oC
Power Dissipation @ T
c
=25oC
@ T
a
=25oC PCB Land Area for
Collector Lead >1 sq inch
@ T
a
=25oC with heat sink
Operating And Storage Junction
Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
T
j
, T
stg
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Thermal Resistance >with PCB land
area for collector lead >1 sq inch
Thermal Resistance Junction to
Ambient with heat sink
R
th (j-c)
R
th (j-a)
R
th (j-a)
R
th (j-a)
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise )
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
Collector Cut Off Current
SYMBOL
*V
CEO
V
CBO
V
EBO
I
CEX
I
CBO
TEST CONDITION
I
C
=10mA, I
B
=0
I
C
=10
μ
A, I
E
=0
I
E
=10
μ
A, I
C
=0
V
CE
=60V, V
EB(off)
=3V
V
CB
=60V, I
E
=0
V
CB
=60V, I
E
=0, T
a
=150oC
V
EB
=3V, I
C
=0
V
CE
=60V, V
EB(off)
=3V
I
C
=0.1mA, V
CE
=10V
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=150mA, V
CE
=10V
I
C
=150mA, V
CE
=1V
I
C
=500mA, V
CE
=10V
MIN
40
75
6
UNIT
V
V
V
nA
nA
μ
A
nA
nA
Emitter Cut Off Current
Base Cut Off Current
DC Current Gain
I
EBO
I
BL
h
FE
35
50
75
100
50
40
*Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2%
TN2222ARev080304E
Continental Device India Limited
P
D
57
167
oC/W
oC/W
0.75
2.2
W
W
MAX
104
83
10
20
- 55 to +150
oC
10
10
10
oC/W
oC/W
300
800
mA
1.2
W
1.5
W
VALUE
40
75
6.0
UNIT
V
V
V
EBC
Data Sheet
Page 1 of 5
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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