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參數(shù)資料
| 型號： | TN0604 |
| 廠商： | Supertex, Inc. |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | N溝道增強型場效應管垂直的DMOS |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | TN0604 |
2
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
700mA
4.6A
700mA
4.6A
SOW-20
*
I
D
(continuous) is limited by max rated T
j
.
Refer to Enhancement Mode MOSFET Arrays Section.
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
40
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
0.6
1.6
V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 2.5mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 5V, V
DS
= 20V
V
GS
= 10V, V
DS
= 20V
Change in V
GS(th)
with Temperature
Gate Body Leakage
-3.8
-4.5
mV/
°
C
100
nA
Zero Gate Voltage Drain Current
10
μ
A
1.0
mA
I
D(ON)
ON-State Drain Current
1.5
2.1
4.0
7.0
R
DS(ON)
TO-92/SOW-20
1.0
1.6
V
GS
= 5V, I
D
= 0.75A
TO-92
0.6
0.75
V
GS
= 10V, I
D
= 1.5A
SOW - 20
1.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.5
0.75
%/
°
C
V
GS
= 10V, I
D
= 1.5A
V
DS
= 20V, I
D
= 1.5A
V
GS
= 0V, V
DS
= 20V
f = 1 MHz
0.5
0.8
Input Capacitance
140
190
Common Source Output Capacitance
75
110
pF
Reverse Transfer Capacitance
25
50
Turn-ON Delay Time
10
Rise Time
6.0
Turn-OFF Delay Time
25
Fall Time
20
Diode Forward Voltage Drop
1.2
1.8
V
V
GS
= 0V, I
SD
= 1.5A
V
GS
= 0V, I
SD
= 1A
Reverse Recovery Time
300
ns
Notes
:
1: All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2: All A.C. parameters sample tested.
V
V
GS
= 0V, I
D
= 2.0mA
A
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
V
DD
= 20V
I
D
= 0.5A
R
GEN
= 25
ns
TN0604
Static Drain-to-Source
ON-State Resistance
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| TN0604_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FET |
| TN0604N3 | 功能描述:MOSFET 40V 0.75Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0604N3-G | 功能描述:MOSFET 40V 0.75Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TN0604N3-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| TN0604N3-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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