- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385003 > TN0601L (Vishay Intertechnology,Inc.) N-Channel Enhancement-Mode MOSFET Transistors(最小漏源擊穿電壓60V，夾斷電流0.47A的N溝道增強(qiáng)型MOSFET晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | TN0601L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistors(最小漏源擊穿電壓60V，夾斷電流0.47A的N溝道增強(qiáng)型MOSFET晶體管) |
| 中文描述： | N溝道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓60V的，夾斷電流0.47A的N溝道增強(qiáng)型MOSFET的晶體管） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 95K |
| 代理商： | TN0601L |
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
Document Number: 70201
S-00591—Rev. D, 03-Apr-00
www.siliconix.com FaxBack 408-970-5600
11-1
N-Channel Enhancement-Mode MOSFET Transistors
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
TN0601L
60
1.8 @ V
GS
= 10 V
0.5 to 2
0.47
VN0606L
3 @ V
GS
= 10 V
0.8 to 2
0.33
VN66AFD
3 @ V
GS
= 10 V
0.8 to 2.5
1.46
Low On-Resistance: 1.2
Low Threshold: <1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 9 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
Top View
TO-226AA
(TO-92)
S
D
G
1
2
3
TO-220SD
(Tab Drain)
Top View
TN0601L
VN0606L
VN66AFD
1
S
D
G
2
3
Parameter
Symbol
TN0601L
VN0606L
VN66AFD
b
Unit
Drain-Source Voltage
V
DS
60
60
60
V
Gate-Source Voltage
V
GS
20
30
30
Continuous Drain Current
(T
J
= 150 C)
T
A
= 25 C
I
D
0.47
0.33
1.46
A
T
A
= 100 C
0.29
0.21
0.92
Pulsed Drain Current
a
I
DM
1.5
1.6
3
Power Dissipation
T
A
= 25 C
P
D
0.8
0.8
15
W
T
A
= 100 C
0.32
0.32
6
Maximum Junction-to-Ambient
R
thJA
156
156
C/W
Maximum Junction-to-Case
R
thJC
8.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
b.
Pulse width limited by maximum junction temperature.
Reference case for all temperature testing.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TN0604 | N-Channel Enhancement-Mode Vertical DMOS FET Quad Array(擊穿電壓40V，低門限1.6V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管四陣列) |
| TN0610 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓100V，低門限2.0V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| TN0606 | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓60V，低門限2.0V，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| TN0606 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN0606N3 | N-Channel Enhancement-Mode Vertical DMOS FETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TN0602 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| TN0602WG | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | SO |
| TN0604 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FET |
| TN0604_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FET |
| TN0604N3 | 功能描述:MOSFET 40V 0.75Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。