參數(shù)資料
型號： TN0200T-T1
英文描述： CA DUAL BANANA/DUAL BANANA 5'
中文描述： 晶體管SOT23封裝貼片MOSFET的
文件頁數(shù)： 1/4頁
文件大?。?/td> 53K
代理商： TN0200T-T1
*Marking Code for TO-236
TN0200T (N0)*
TN0200TS (NS)*
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
TN0200T/TS
Siliconix
S-52426—Rev. B, 14-Apr-97
1
N-Channel Enhancement-Mode MOSFET
Product Summary
I
D
(A)
V
DS
(V)
r
DS(on)
( )
TN0200T
TN0200TS
20
0.4 @ V
GS
= 4.5 V
0.73
1.2
0.5 @ V
GS
= 2.5 V
0.65
1.1
Features
Low On-Resistance: 0.29
Low Threshold: 0.9 V (typ)
2.5-V or Lower Operation
Fast Switching Speed: 22 ns
Low Input and Output Leakage
Benefits
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Low Error Voltage
Low Battery Voltage Operation
Applications
Direct Logic-Level Interfact: TTL/CMOS
Dirvers: Relays, Solenoids, Lamps, Hammers
Battery Operated Systems, DC/DC Converters
Solid-State Relays
Load/Power Switching–Cell Phones, Pagers
Absolute Maximum Ratings (T
A
= 25 C Unless Otherwise Noted)
Parameter
Symbol
TN0200T
TN0200TS
c
Unit
Drain-Source Voltage
V
DS
20
20
V
Gate-Source Voltage
V
GS
8
8
Continuous Drain Current (T
J
= 150 C)
b
T
A
= 25 C
I
D
0.73
1.2
T
A
= 70 C
0.58
1.0
A
Pulsed Drain Current
a
I
DM
4
4
Continuous Source Current (Diode Conduction)
b
I
S
0.6
1.0
Power Dissipation
b
T
A
= 25 C
P
D
0.35
1.0
W
T
A
= 70 C
0.22
0.65
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Thermal Resistance Ratings
Parameter
Symbol
TN0200T
TN0200TS
c
Unit
Maximum Junction-to-Ambient
b
R
thJA
357
125
C/W
Notes
a.
b.
c.
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t
Copper lead frame.
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70202.
A SPICE Model data sheet is available for this product (FaxBack document #70560).
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