參數(shù)資料
型號: TMS320C6205DGHK200
廠商: Texas Instruments
文件頁數(shù): 8/73頁
文件大小: 0K
描述: IC FIXED-POINT DSP 288-BGA
標(biāo)準(zhǔn)包裝: 90
系列: TMS320C62x
類型: 定點(diǎn)
接口: McBSP,PCI
時鐘速率: 200MHz
非易失內(nèi)存: 外部
芯片上RAM: 128kB
電壓 - 輸入/輸出: 3.30V
電壓 - 核心: 1.50V
工作溫度: 0°C ~ 90°C
安裝類型: 表面貼裝
封裝/外殼: 288-LFBGA
供應(yīng)商設(shè)備封裝: 288-BGA Microstar(16x16)
包裝: 托盤
TMS320C6205
FIXEDPOINT DIGITAL SIGNAL PROCESSOR
SPRS106G OCTOBER 1999 REVISED JULY 2006
16
POST OFFICE BOX 1443
HOUSTON, TEXAS 772511443
Signal Descriptions (Continued)
SIGNAL
TYPE
DESCRIPTION
NAME
NO.
TYPE
DESCRIPTION
PCI INTERFACE (CONTINUED)
PINTA
C1
O/Z
PCI interrupt A
PREQ
F2
O/Z
PCI bus request (bus arbitration)
PSERR
P5
O/Z
PCI system error
PPERR
P2
I/O/Z
PCI parity error
PRST
C2
I
PCI reset
PDEVSEL
R2
I/O/Z
PCI device select
PGNT
D1
I
PCI bus grant (bus arbitration)
PFRAME
N5
I/O/Z
PCI frame
PIRDY
P1
I/O/Z
PCI initiator ready
PPAR
T3
I/O/Z
PCI parity
PIDSEL
H5
I
PCI initialization device select
PSTOP
R1
I/O/Z
PCI stop
PTRDY
N3
I/O/Z
PCI target ready
XSP_CLK
C17
O
Serial EEPROM clock
XSP_DI
C18
I
Serial EEPROM data in, pulldown with a dedicated 20-k
resistor
XSP_DO
B19
O
Serial EEPROM data out
XSP_CS
C11
O
Serial EEPROM chip select
3.3VauxDET
B1
I
3.3-V auxiliary power supply detect.
Used to indicate the presence of 3.3Vaux. A weak pulldown must be implemented to this pin.
3.3Vaux
B2
S
3.3-V auxiliary power supply voltage
PME
D3
O
Power management event
PWR_WKP
A2
I
Power wakeup signal
EMIF CONTROL SIGNALS COMMON TO ALL TYPES OF MEMORY
CE3
V18
Memory space enables
CE2
U17
O/Z
Memory space enables
Enabled by bits 24 and 25 of the word address
CE1
W18
O/Z
DEnabled by bits 24 and 25 of the word address
DOnly one asserted during any external data access
CE0
V17
DOnly one asserted during any external data access
BE3
U16
Byte-enable control
BE2
W17
O/Z
Byte-enable control
DDecoded from the two lowest bits of the internal address
BE1
V16
O/Z
DDecoded from the two lowest bits of the internal address
DByte-write enables for most types of memory
Can be directly connected to SDRAM read and write mask signal (SDQM)
BE0
W16
Byte-write enables for most types of memory
DCan be directly connected to SDRAM read and write mask signal (SDQM)
EMIF ADDRESS
EA21
V7
EA20
W7
EA19
U8
O/Z
External address (word address)
EA18
V8
O/Z
External address (word address)
EA17
W8
I = Input, O = Output, Z = High Impedance, S = Supply Voltage, GND = Ground
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