- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385939 > TMS27C040-15 (Texas Instruments, Inc.) Programmable Read-Only Memory(512K×8結(jié)構(gòu),可擦可編程只讀存儲(chǔ)器) PDF資料下載
參數(shù)資料
| 型號(hào)： | TMS27C040-15 |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | Programmable Read-Only Memory(512K×8結(jié)構(gòu),可擦可編程只讀存儲(chǔ)器) |
| 中文描述： | 可編程只讀存儲(chǔ)器（為512k × 8結(jié)構(gòu)，可擦可編程只讀存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 236K |
| 代理商： | TMS27C040-15 |
TMS27C040 4194304-BIT UV ERASABLE PROGRAMMABLE
TMS27PC040 4194304-BIT PROGRAMMABLE
READ-ONLY MEMORY
SMLS040E – NOVEMBER 1990 – REVISED JUNE 1995
1
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
Organization . . . 512K
×
8
Single 5-V Power Supply
Industry Standard 32-Pin Dual In-Line
Package and 32-Lead Plastic Leaded Chip
Carrier
All Inputs/Outputs Fully TTL Compatible
Static Operation (No Clocks, No Refresh)
Max Access/Min Cycle Time
V
CC
±
10%
’27C/PC040-10
100 ns
’27C/PC040-12
120 ns
’27C/PC040-15
150 ns
8-Bit Output For Use in
Microprocessor-Based Systems
Power-Saving CMOS Technology
3-State Output Buffers
400-mV Assured DC Noise Immunity With
Standard TTL Loads
Latchup Immunity of 250 mA on All Input
and Output Pins
No Pullup Resistors Required
Low Power Dissipation (V
CC
= 5.5 V)
– Active . . . 275 mW Worst Case
– Standby . . . 0.55 mW Worst Cas E
(CMOS-Input Levels)
PEP4 Version Available With 168-Hour
Burn-In, and Choice of Two Operating
Temperature Ranges
description
The TMS27C040 series are 4194304-bit, ultra-
violet-light erasable, electrically programmable
read-only memories.
The TMS27PC040 series are 4194304-bit,
one-time electrically programmable read-only
memories.
These devices are fabricated using CMOS
technology for high speed and simple interface
with MOS and bipolar circuits. All inputs (including
program data inputs) can be driven by Series 74
TTL circuits. Each output can drive one Series 74
TTL circuit without external resistors. The data
outputs are three-state for connecting multiple
devices to a common bus.
3
2 1 32 31
14
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
4
30
15 16 17 18 19 20
TMS27C040
J PACKAGE
(TOP VIEW)
PIN NOMENCLATURE
A0–A18
DQ0–DQ7
E
G
GND
VCC
VPP
Address Inputs
Inputs (programming)/Outputs
Chip Enable
Output Enable
Ground
5-V Supply
13-V Power Supply
Only in program mode.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
PP
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
V
CC
A18
A17
A14
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
A14
A13
A8
A9
A11
G
A10
E
DQ7
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
D
D
D
D
D
A
A
A
P
A
A
TMS27PC040
FM PACKAGE
(TOP VIEW)
D
G
V
Copyright
1995, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TMS27C256-150 | Programmable Read-Only Memory(32K×8結(jié)構(gòu),可擦可編程只讀存儲(chǔ)器) |
| TMS27C512-150 | Programmable Read-Only Memory(64K×8結(jié)構(gòu),可擦可編程只讀存儲(chǔ)器) |
| TMS28F512A(中文) | Flash Electrically Erasable Programmable Read-Only Memory(64K×8結(jié)構(gòu),可擦可編程閃速只讀存儲(chǔ)器) |
| TMS28F512A-15C4FML(中文) | Flash Electrically Erasable Programmable Read-Only Memory(64K×8結(jié)構(gòu),可擦可編程閃速只讀存儲(chǔ)器) |
| TMS29F040(中文) | Flash Electrically Erasable Programmable Read-Only Memory(512K×8結(jié)構(gòu),可擦可編程閃速只讀存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TMS27C128 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:131 072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS27C128120JL | 制造商:Texas Instruments 功能描述: |
| TMS27C128-12FME | 制造商:TI 制造商全稱:Texas Instruments 功能描述:131 072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS27C128-12FME4 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:131 072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
| TMS27C128-12FML | 制造商:TI 制造商全稱:Texas Instruments 功能描述:131 072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。