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參數(shù)資料
| 型號： | TMP01FJ2 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | Low Power, Programmable Temperature Controller |
| 中文描述： | 低功耗，可編程溫度控制器 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 377K |
| 代理商： | TMP01FJ2 |
TMP01
REV. C
–4–
WAFER TEST LIMTS
Parameter
Symbol
Conditions
Min
T yp
Max
Units
INPUT S SET HIGH, SET LOW
Input Bias Current
I
B
100
nA
OUT PUT VPT AT
T emperature Accuracy
T
A
= +25
°
C, No Load
1.5
°
C
OUT PUT VREF
Nominal Value
Line Regulation
Load Regulation
VREF
T
A
= +25
°
C, No Load
4.5 V
≤
V+
≤
13.2 V
10
μ
A
≤
I
VREF
≤
500
μ
A
2.490
2.510
±
0.05
±
0.25
V
%/V
%/mA
OPEN-COLLECT OR OUT PUT S OVER, UNDER
Output Low Voltage
Output Low Voltage
Output Leakage Current
V
OL
V
OL
I
OH
I
SINK
= 1.6 mA
I
SINK
= 20 mA
0.4
1.0
100
mV
V
μ
A
POWER SUPPLY
Supply Range
Supply Current
V+
I
SY
4.5
13.2
600
V
μ
A
Unloaded
NOT ES
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
DICE CHARACT E RIST ICS
Die Size 0.078
×
0.071 inch, 5,538 sq. mils
(1.98
×
1.80 mm, 3.57 sq. mm)
T ransistor C ount: 105
For additional DICE ordering information, refer to databook.
8
7
6
5
1
2
3
4
4
1. VREF
2. SETHIGH
3. SETLOW
4. GND (TWO PLACES)
(CONNECTED TO SUBSTRATE)
5. VPTAT
6. UNDER
7. OVER
8. V+
(V
DD
= +5.0 V, GND = 0 V, T
A
= +25
8
C, unless otherwse noted)
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