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TMP01
REV. C
–10–
Switching Loads With T he Open-Collector Outputs
In many temperature sensing and control applications some type
of switching is required. Whether it be to turn on a heater when
the temperature goes below a minimum value or to turn off a
motor that is overheating, the open-collector outputs Over and
Under can be used. For the majority of applications, the switches
used need to handle large currents on the order of 1 amp and
above. Because the T MP01 is accurately measuring tempera-
ture, the open-collector outputs should handle less than 20 mA
of current to minimize self-heating. Clearly, the Over-temp and
Under-temp outputs should not drive the equipment directly.
Instead, an external switching device is required to handle the
large currents. Some examples of these are relays, power
MOSFET s, thyristors, IGBT s, and Darlingtons.
Figure 15 shows a variety of circuits where the T MP01 controls
a switch. T he main consideration in these circuits, such as the
relay in Figure 15a, is the current required to activate the
switch.
MOTOR
SHUTDOWN
2604-12-311
COTO
IN4001
OR EQUIV.
+12V
R1
R2
R3
TEMPERATURE
SENSOR &
VOLTAGE
REFERENCE
1
2
3
4
7
HYSTERESIS
GENERATOR
WINDOW
COMPARATOR
TMP01
VPTAT
VREF
8
5
6
Figure 15a. Reed Relay Drive
It is important to check the particular relay you choose to ensure
that the current needed to activate the coil does not exceed the
T MP01’s recommended output current of 20 mA. T his is easily
determined by dividing the relay coil voltage by the specified
coil resistance. K eep in mind that the inductance of the relay
will create large voltage spikes that can damage the T MP01 out-
put unless protected by a commutation diode across the coil, as
shown. T he relay shown has a contact rating of 10 watts maxi-
mum. If a relay capable of handling more power is desired, the
larger contacts will probably require a commensurately larger
coil, with lower coil resistance and thus higher trigger current.
As the contact power handling capability increases, so does the
current needed for the coil. In some cases an external driving
transistor should be used to remove the current load on the
T MP01 as explained in the next section.
Power FET s are popular for handling a variety of high current
DC loads. Figure 15b shows the T MP01 driving a p-channel
MOSFET transistor for a simple heater circuit. When the out-
put transistor turns on, the gate of the MOSFET is pulled down
to approximately 0.6 V, turning it on. For most MOSFET s a
gate-to-source voltage or Vgs on the order of –2 V to –5 V is suf-
ficient to turn the device on. Figure 15c shows a similar circuit
for turning on an n-channel MOSFET , except that now the gate
to source voltage is positive. Because of this reason an external
transistor must be used as an inverter so that the MOSFET will
turn on when the “Under T emp” output pulls down.
NC = NO CONNECT
NC
NC
IRFR9024
OR EQUIV.
HEATING
ELEMENT
2.4k
(12V)
1.2k
(6V)
5%
V+
R1
R2
R3
TEMPERATURE
SENSOR &
VOLTAGE
REFERENCE
1
2
3
4
7
HYSTERESIS
GENERATOR
WINDOW
COMPARATOR
TMP01
VPTAT
VREF
8
5
6
Figure 15b. Driving a P-Channel MOSFET
IRF130
NC = NO CONNECT
NC
NC
2N1711
HEATING
ELEMENT
V+
R1
R2
R3
4.7k
4.7k
TEMPERATURE
SENSOR &
VOLTAGE
REFERENCE
1
2
3
4
HYSTERESIS
GENERATOR
WINDOW
COMPARATOR
TMP01
VPTAT
VREF
7
8
5
6
Figure 15c. Driving a N-Channel MOSFET
Isolated Gate Bipolar T ransistors (IGBT ) combine many of the
benefits of power MOSFET s with bipolar transistors, and are
used for a variety of high power applications. Because IGBT s
have a gate similar to MOSFET s, turning on and off the devices
is relatively simple as shown in Figure 15d. T he turn on voltage
for the IGBT shown (IRGBC40S) is between 3.0 and 5.5 volts.
T his part has a continuous collector current rating of 50 A and a
maximum collector to emitter voltage of 600 V, enabling it to
work in very demanding applications.
IRGBC40S
NC = NO CONNECT
NC
NC
2N1711
V+
R1
R2
R3
4.7k
4.7k
TEMPERATURE
SENSOR &
VOLTAGE
REFERENCE
1
2
3
4
HYSTERESIS
GENERATOR
WINDOW
COMPARATOR
TMP01
VPTAT
VREF
7
8
5
6
MOTOR
CONTROL
Figure 15d. Driving an IGBT