參數(shù)資料
型號(hào)： TMM5711
廠商： 意法半導(dǎo)體
英文描述： Small Signal Schottky Diode(小信號(hào)肖特基二極管)
中文描述： 小信號(hào)肖特基二極管（小信號(hào)肖特基二極管）
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 62K
代理商： TMM5711
TMM5711
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection
and pulse application with broad dynamic range.
Matched batches are available on request.
November 1994
MINIMELF
(Glass)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive Peak Reverse Voltage
70
V
I
F
Forward Continuous Current
T
i
= 25
°
C
15
mA
P
tot
Power Dissipation
T
i
= 25
°
C
430
mW
T
stg
T
j
Storage and Junction Temperature Range
- 65 to 200
-65 to 200
°
C
T
L
Maximum Temperature for Soldering during 15s
260
°
C
ABSOLUTE MAXIMUM RATINGS
(limiting values)
Symbol
Test Conditions
Value
Unit
R
th(j-l)
Junction-leads
400
°
C/W
THERMAL RESISTANCE
* Pulse test: t
≤
300
μ
s
δ
<
2%
.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
BR
T
amb
= 25
°
C
I
R
= 10
μ
A
70
V
V
*
T
amb
= 25
°
C
I
F
= 1mA
0.41
V
T
amb
= 25
°
C
I
F
= 15mA
1
I
R
*
T
amb
= 25
°
C
V
R
= 50V
0.2
μ
A
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
T
amb
= 25
°
C
V
R
= 0V
f = 1MHz
2
pF
τ
T
amb
= 25
°
C
I
F
= 5mA
Krakauer Method
100
ps
DYNAMIC CHARACTERISTICS
1/3
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