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參數(shù)資料
| 型號： | TMD5872-2 |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER MMIC AMPLIFIEMICROWAVE AMPLIFIER |
| 中文描述： | 微波功率微波單片集成電路AMPLIFIEMICROWAVE放大器 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 33K |
| 代理商： | TMD5872-2 |
MICROWAVE POWE R MMIC AMPLIFIE R
MICROWAVE SE MICONDUCTOR
TECHNICAL DATA
TMD5872-2
FEAT URE S
P1dB=34.0dBm (TYP.) G1dB=28.0dB (TYP.)
HIGH POWER ADDED EFFICIENCY
BROADBAND OPERATION
η
add=21% (TYP.) f=5.8-7.2GHz
HIGH POWER
HIGH GAIN
ABSOLUTE MAXIMUM RATINGS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain Supply Voltage
V
DD
V
15
Gate Supply Voltage
V
GG
V
-10
Input Power
P
in
dBm
°
C
°
C
10
Flange Temperature
T
f
-30
～
+80
-65
～
+175
Storage Temperature
T
stg
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
SYMBOL
CONDITION
UNIT
MIN. TYP. MAX.
Operating Frequency
Output Power at 1dB Gain
Compression Point
f
GHz
dBm
5.8
32.0
34.0
7.2
P
1dB
Power Gain at 1dB Gain
Compression Point
G
1dB
dB
25.0
28.0
Gain Flatness
G
I
DD
η
add
VSWRi
dB
1.2
±
2.0
1.6
3.0:1
Drain Current
A
Power Added Efficiency
%
21
Input VSWR (small signal)
V
DD
= 10V
V
GG
= -5V
2.0:1
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Revised August 2000
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