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參數(shù)資料
| 型號： | TMD3438-1 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Microwave Power MMIC Amplifier(微波功率MMIC（單片式微波集成電路）放大器) |
| 中文描述： | 微波功率單片放大器（微波功率微波單片集成電路（單片式微波集成電路）放大器） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 220K |
| 代理商： | TMD3438-1 |
1
MICROWAVE SE MICONDUCTOR
TE CHNICAL DATA
MICROWAVE POWE R MMIC AMPL IF IE R
T MD3438-1
FEATURES
n
Suitable for WLL Suscriber/CPE
n
High Power P1dB=29dBm(min)
n
High Gain G1dB=29dB(min)
n
High Linearity
ABSOL UTE MAXIMUM RATINGS(Ta=25
o
C)
CHARACTERISTICS
SYMBOL
UNIT
RATINGS
Drain Supply Voltage
VDD
V
10
Gate Supply Voltage
VGG
V
-10
Input Power
Pin
dBm
10
Total Power Dissipation
PT
W
6
Flange Temperature
Tf
o
C
-40 ~ +85
Storage Temperature
Tstg
o
C
-65 ~ +150
RF PE RF ORMANCE SPE CIF ICATIONS (Ta=25
o
C)
CHARACTERISTICS
SYMBOL
CONDITION
UNIT
MIN.
TYP.
MAX.
Operating Frequency
f
GHz
3.4
3.8
Output Power at 1dB
Gain Compression Point
P1dB
dBm
29.0
Power Gain at 1dB
Gain Compression Point
G1dB
dB
29.0
Noise Figure
NF
VDD=7.5V
VGG=-5.0V
dB
8.0
9.0
Drain Current
IDD
@ Pin=-6dBm
mA
500
550
Input Return Loss
dB
10
Output Return Loss
Small Signal
Level
dB
10
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding
with design of equipment incorporating this product.
u
March, 00e
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