參數(shù)資料
型號(hào): TLV2342Y
廠商: Texas Instruments, Inc.
英文描述: LinCMOSE LOW-VOLTAGE HIGH-SPEED OPERATIONAL AMPLIFIERS
中文描述: LinCMOSE低壓高速運(yùn)算放大器
文件頁(yè)數(shù): 26/34頁(yè)
文件大?。?/td> 519K
代理商: TLV2342Y
TLV2342, TLV2342Y, TLV2344, TLV2344Y
LinCMOS
LOW-VOLTAGE HIGH-SPEED
OPERATIONAL AMPLIFIERS
SLOS194 – FEBRUARY 1997
26
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
APPLICATION INFORMATION
single-supply operation (continued)
The TLE2426 supplies an accurate voltage equal to V
DD
/2 while consuming very little power and is suitable for
supply voltages of greater than 4 V.
The TLV234x works well in conjunction with digital logic; however, when powering both linear devices and digital
logic from the same power supply, the following precautions are recommended:
Power the linear devices from separate bypassed supply lines (see Figure 41); otherwise, the linear
device supply rails can fluctuate due to voltage drops caused by high switching currents in the digital
logic.
Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitive
decoupling is often adequate; however, RC decoupling may be necessary in high-frequency
applications.
+
Logic
Logic
Logic
Power
Supply
+
Logic
Logic
Logic
Power
Supply
(a) COMMON-SUPPLY RAILS
(b) SEPARATE-BYPASSED SUPPLY RAILS (preferred)
Figure 41. Common Versus Separate Supply Rails
input characteristics
The TLV234x is specified with a minimum and a maximum input voltage that, if exceeded at either input, could
cause the device to malfunction. Exceeding this specified range is a common problem, especially in
single-supply operation. The lower range limit includes the negative rail, while the upper range limit is specified
at V
DD
– 1 V at T
A
= 25
°
C and at V
DD
– 1.2 V at all other temperatures.
The use of the polysilicon-gate process and the careful input circuit design gives the TLV234x very good input
offset voltage drift characteristics relative to conventional metal-gate processes. Offset voltage drift in CMOS
devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus dopant
implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate) alleviates the
polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude. The offset
voltage drift with time has been calculated to be typically 0.1
μ
V/month, including the first month of operation.
Because of the extremely high input impedance and resulting low bias-current requirements, the TLV234x is
well suited for low-level signal processing; however, leakage currents on printed-circuit boards and sockets can
easily exceed bias-current requirements and cause a degradation in device performance.
相關(guān)PDF資料
PDF描述
TLV2344ID LinCMOSE LOW-VOLTAGE HIGH-SPEED OPERATIONAL AMPLIFIERS
TLV2344Y LinCMOSE LOW-VOLTAGE HIGH-SPEED OPERATIONAL AMPLIFIERS
TLV2361(中文) Single High-Performance, Low-Voltage OP AMP(高性能,可編程低電壓?jiǎn)芜\(yùn)放)
TLV2362(中文) Dual High-Performance, Low-Voltage OP AMP(高性能,可編程低電壓雙運(yùn)放)
TLV2432(中文) Advanced Lincmos Rail-TO-Rail Output Wide-Input-Voltage Dual OP AMP(寬輸入電壓,低功耗,中速,高輸出驅(qū)動(dòng)雙運(yùn)放)
相關(guān)代理商/技術(shù)參數(shù)
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TLV2344 制造商:TI 制造商全稱:Texas Instruments 功能描述:LinCMOSE LOW-VOLTAGE HIGH-SPEED OPERATIONAL AMPLIFIERS
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TLV2344IN 功能描述:運(yùn)算放大器 - 運(yùn)放 Quad LiNCMOS RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比(最小值):63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流(最大值):10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel
TLV2344INE4 功能描述:運(yùn)算放大器 - 運(yùn)放 Quad LinCMOS Lo-Vltg High-Speed RoHS:否 制造商:STMicroelectronics 通道數(shù)量:4 共模抑制比(最小值):63 dB 輸入補(bǔ)償電壓:1 mV 輸入偏流(最大值):10 pA 工作電源電壓:2.7 V to 5.5 V 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 轉(zhuǎn)換速度:0.89 V/us 關(guān)閉:No 輸出電流:55 mA 最大工作溫度:+ 125 C 封裝:Reel