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參數(shù)資料
| 型號： | TLP3521 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Photocoupler GaAs Ired & Photo-Triac |
| 中文描述： | 東芝光電耦合砷化鎵登記合格決定 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 170K |
| 代理商： | TLP3521 |
TLP3521
2002-09-25
3
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
= 10mA
1.0
1.15
1.3
V
Reverse current
I
R
V
R
= 5V
―
―
10
μA
L
Capacitance
C
T
V = 0, f = 1MHz
―
30
―
pF
Peak off state current
I
DRM
V
DRM
=400 V, Ta = 110°C
―
―
100
μA
Peak on state voltage
V
TM
I
TM
= 1.5A
―
―
3.0
V
Holding current
I
H
R
L
= 100
―
―
25
mA
Critical rate of rise of
off state voltage
dv / dt
V
in
= 120V
rms
(Fig.1)
200
500
―
V / μs
D
Critical rate of rise of
commutating voltage
dv / dt (c)
V
in
= 120V
rms
, I
T
= 1.0A
rms
(Fig.1)
―
5
―
V / μs
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Trigger LED current
I
FT
V
T
= 6V
―
―
10
mA
Inhibit voltage
V
IH
I
F
= rated I
FT
―
―
50
V
Leakage in inhibited state
I
IH
I
F
= rated I
FT
V
T
= rated V
DRM
―
200
―
μA
Capacitance
(input to output)
C
S
V
S
= 0, f = 1MHz
―
1.5
―
pF
Isolation resistance
R
S
V
S
= 500V
5×10
10
10
14
―
AC, 1 minute
2500
―
―
AC, 1 second, in oil
―
5000
―
V
rms
Isolation voltage
BV
S
DC, 1 minute, in oil
―
5000
―
V
dc
Fig.1: dv / dt test circuit
5V, V
CC
0V
dv / dt
（
c
）
dv / dt
～
Rin
RL
Vin
2
3
15
V
CC
120
＋
－
13
11
9
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