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參數(shù)資料
| 型號(hào)： | TLP321 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Photocoupler GaAs Ired & Photo−Transistor |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 228K |
| 代理商： | TLP321 |
TLP321,TLP321-2,TLP321-4
2002-09-25
4
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
V
CC
―
12
48
V
Forward current
I
F
―
16
20
mA
Collector current
I
C
―
1
10
mA
Operating temperature
T
opr
25
―
85
°C
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Condition
Min.
Typ.
Max.
Unit
Forward voltage
V
F
I
F
=10 mA
1.0
1.15
1.3
V
Reverse current
I
R
V
R
=5 V
—
—
10
μA
L
Capacitance
C
T
V = 0, f = 1MHz
—
30
—
pF
Collector emitter
breakdown voltage
V
(BR) CEO
I
C
= 0.5mA
80
—
—
V
Emitter collector
breakdown voltage
V
(BR) ECO
I
E
= 0.1mA
7
—
—
V
V
CE
= 48V
—
10
100
nA
Collector dark current
I
CEO
V
CE
= 48V, Ta = 85°C
—
2
50
μA
D
Capacitance
(collector to emitter)
C
CE
V = 0, f = 1MHz
—
10
—
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Condition
MIn.
Typ.
Max.
Unit
50
—
600
Current transfer ratio
I
C
/ I
F
I
F
= 5mA, V
CE
= 5V
Rank GB
100
—
600
%
—
60
—
Saturated CTR
I
C
/ I
F (sat)
I
F
= 1mA, V
CE
= 0.4V
Rank GB
30
—
—
%
I
C
= 2.4mA, I
F
= 8mA
—
—
0.4
—
0.2
—
Collector emitter
saturation voltage
V
CE (sat)
I
C
= 0.2mA, I
F
= 1mA
Rank GB
—
—
0.4
V
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