參數(shù)資料
型號(hào): TLOE50T
廠商: Toshiba Corporation
英文描述: TOSHIBA InGaALP LED
中文描述: 東芝超高亮度四元素發(fā)光二極管
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 220K
代理商: TLOE50T
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
2002-01-17
2
Maximum Ratings
(Ta 25°C)
Product Name
Forward Current
I
F
(mA)
Reverse Voltage
V
R
(V)
Power Dissipation
P
D
(mW)
Operating
Temperature
T
opr
(°C)
Storage
Temperature
T
stg
(°C)
TLRE50T
50
4
120
TLRME50T
50
4
120
TLSE50T
50
4
120
TLOE50T
50
4
120
TLYE50T
50
4
120
TLPYE50T
50
4
120
TLGE50T
50
4
120
TLFGE50T
50
4
120
TLPGE50T
50
4
120
40~100
40~120
Electrical and Optical Characteristics
(Ta 25°C)
Typ. Emission Wavelength
Luminous Intensity
I
V
Min
Typ.
Forward Voltage
V
F
Typ.
Max
Reverse Current
I
R
Max
Product Name
d
P
I
F
20
I
F
20
I
F
20
V
R
4
TLRE50T
630
(644)
20
850
1800
1.9
2.4
50
TLRME50T
626
(636)
23
20
850
2200
20
1.9
2.4
20
50
4
TLSE50T
613
(623)
20
20
1530
3500
20
1.9
2.4
20
50
4
TLOE50T
605
(612)
20
20
1530
4500
20
2.0
2.4
20
50
4
TLYE50T
587
(590)
17
20
1530
3500
20
2.0
2.4
20
50
4
TLPYE50T
580
(583)
14
20
850
2500
20
2.0
2.4
20
50
4
TLGE50T
571
(574)
17
20
476
1500
20
2.0
2.4
20
50
4
TLFGE50T
565
(568)
15
20
272
1000
20
2.0
2.4
20
50
4
TLPGE50T
558
(562)
14
20
153
600
20
2.1
2.4
20
50
4
Unit
nm
mA
mcd
mA
V
mA
A
V
Precautions
Please be careful of the following:
Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 2 mm from the body of the device)
If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to
the resin. Soldering should be performed after lead forming.
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
相關(guān)PDF資料
PDF描述
TLPYE50T TOSHIBA InGaALP LED
TLRE50T TOSHIBA InGaALP LED
TLYE50T TOSHIBA InGaALP LED
TLFGE50T TOSHIBA InGaALP LED
TLRME50T Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: SIPMOS&#174;; V<sub>DS</sub> (max): 55.0 V; R<sub>DS (on)</sub> (max) (@10V): 8.0 mOhm; I<sub>D </sub> (max): 80.0 A; R<sub>thJC</sub> (max): 0.5 K/W;
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