參數(shù)資料
型號: TLN201F
廠商: Toshiba Corporation
英文描述: Infrared LED GaAГAs Infrared Emitter
中文描述: 紅外發(fā)光二極管GaAГAs紅外線發(fā)射器
文件頁數(shù): 1/5頁
文件大小: 205K
代理商: TLN201F
TLN201(F)
2007-10-01
1
TOSHIBA Infrared LED GaA
As Infrared Emitter
TLN201(F)
Lead(Pb)-Free
Opto
Electronic Switches
Tape And Card Readers
Equipment Using Infrared Transmission
To
18 metal package.
High radiant power: P
o
= 5mW(typ.)
High radiant intensity: I
E
= 35mW / sr(typ.)
Excellent radiant
intensity linearity. Modulation by pulse operation
and high frequency is possible.
Highly reliable due to hermetic seal
Same external shape as TPS708(F) photodiode
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I
F
100
mA
Forward current derating
(Ta > 25°C)
Δ
I
F
/ °C
1
mA / °C
Pulse forward current
(Note 1)
I
FP
1
A
Reverse voltage
V
R
5
V
Operating temperature range
T
opr
40~125
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Pulse width
100
μ
s,repetitive frequency = 100Hz
Markings
Unit: mm
TOSHIBA
4
5Q2
Weight: 0.33 g (typ.)
Pin Connection
1.
Cathode
2.
Anode
(case)
1
2
Letter color:red
Product No.(TL omitted)
Monthly lot number
Month of manufacture
(January to December denoted by letters A to L respectively)
Year of manufacture
(last digit of year of manufacture)
N201
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