參數(shù)資料
型號: TLHB4400
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Visible LED, T-1 SINGLE COLOR LED, BLUE, 2.9 mm, ROHS COMPLIANT, PLASTIC PACKAGE-2
中文描述: Standard LED - Through Hole Blue Tinted Diffused
文件頁數(shù): 1/5頁
文件大小: 100K
代理商: TLHB4400
Vishay Semiconductors
TLHB4400
Document Number 83016
Rev. 1.7, 20-Apr-11
www.vishay.com
1
For technical support, please contact:
LED@vishay.com
This document is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
High Efficiency Blue LED, 3 mm Tinted Diffused Package
FEATURES
GaN on SiC technology
Standard 3 mm (T-1) package
Small mechanical tolerances
Wide viewing angle
Very high intensity
Luminous intensity categorized
ESD class 1
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
19222
DESCRIPTION
This device has been redesigned in 1998 replacing
SiC by GaN technology to meet the increasing
demand for high efficiency blue LEDs.
It is housed in a 3 mm tinted diffused plastic package.
All packing units are categorized in luminous intensity
groups. That allows users to assemble LEDs with
uniform appearance.
APPLICATIONS
Status lights
Off/on indicator
Background illumination
Readout lights
Maintenance lights
Legend light
PRODUCT GROUP AND PACKAGE DATA
Product group: LED
Package: 3 mm
Product series: standard
Angle of half intensity: ± 30°
Note:
1)
T
amb
= 25 °C, unless otherwise specified
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
PARTS TABLE
PART
TLHB4400
COLOR, LUMINOUS INTENSITY
Blue, I
V
> 6.3 mcd
TECHNOLOGY
GaN on SiC
ABSOLUTE MAXIMUM RATINGS
1)
TLHB4400
PARAMETER
Reverse voltage
TEST CONDITION
SYMBOL
V
R
I
F
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
VALUE
5
UNIT
V
DC Forward current
T
amb
60 °C
t
p
10 μs
T
amb
60 °C
20
mA
Surge forward current
0.1
A
Power dissipation
100
mW
Junction temperature
100
°C
Operating temperature range
- 40 to + 100
°C
Storage temperature range
- 40 to + 100
°C
Soldering temperature
Thermal resistance junction/
ambient
t
5 s, 2 mm from body
260
°C
R
thJA
400
K/W
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