參數(shù)資料
型號(hào): TLE4925
廠商: INFINEON TECHNOLOGIES AG
元件分類: 模擬信號(hào)調(diào)理
英文描述: SPECIALTY ANALOG CIRCUIT, PSSS3
封裝: PLASTIC, SSO-3
文件頁數(shù): 13/28頁
文件大?。?/td> 1066K
代理商: TLE4925
Data Sheet
Page 20 of 28
10/02/2005
4.1 Electro Magnetic Compatibility - (values depend on RSeries!)
Ref. ISO 7637-1; see test circuit of figure 4 and 5;
BPP = 10mT (ideal sinusoidal signal); VS=13.5V ± 0.5V, fB= 1000Hz; T= 25°C; RSeries ≥ 200;
No.
Parameter
Symbol
Level/typ
Status
4.1.1
Testpulse 1
Testpulse 2
Testpulse 3a
Testpulse 3b
Testpulse 4
Testpulse 5
VEMC
IV / -100V
IV / 100V
IV / -150V
IV / 100V
IV / -7V
IV / 86.5V
C
A
C
Note: Test criteria for status A: No missing pulse no additional pulse on the IC output signal plus
duty cycle and jitter are in the specification limits.
Test criteria for status B: No missing pulse no additional pulse on the IC output signal.
(Output signal “OFF” means switching to the voltage of the pull-up resistor).
Test criteria for status C: One or more parameter can be out of specification during the
exposure but returns automatically to normal operation after exposure is removed.
Test criteria for status E: IC destroyed.
Ref. ISO 7637-3; TP 1 and TP 2 ref. DIN 40839-3; see test circuit of figure 4 and 5;
BPP = 10mT (ideal sinusoidal signal); VS=13.5V ± 0.5V, fB= 1000Hz; T= 25°C; RSeries ≥ 200;
No.
Parameter
Symbol
Level/typ
Status
4.1.2
Testpulse 1
Testpulse 2
Testpulse 3a
Testpulse 3b
VEMC
IV / -30V
IV / 30V
IV / -60V
IV / 40V
A
Ref. ISO 11452-3; see test circuit of figure 4 and 5; measured in TEM-cell;
BPP = 4mT (ideal sinusoidal signal); VS=13.5V ± 0,5V, fB= 200Hz; T= 25°C; RSeries ≥ 200;
No.
Parameter
Symbol
Level/max
Remarks
4.1.3
EMC field strength
ETEM-Cell
IV / 200V/m
AM=80%, f=1kHz;
Note: Stresses above those listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Test condition for the trigger window: fB-field=200Hz, Bpp=4mT, vertical limits are ±200mV
and horizontal limits are
±200s.
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