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參數(shù)資料
| 型號： | TLC5540NS |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | 8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER |
| 中文描述： | 8位高速模擬數(shù)字轉換器 |
| 文件頁數(shù)： | 5/17頁 |
| 文件大小： | 234K |
| 代理商： | TLC5540NS |
TLC5540
8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER
SLAS105C – JANUARY 1995 – REVISED MAY 1999
5
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics at V
DD
= 5 V, V
I(REFT)
= 2.6 V, V
I(REFB)
= 0.6 V, f
s
= 40 MSPS, T
A
= 25
°
C
(unless otherwise noted)
PARAMETER
TEST CONDITIONS
TA = 25
°
C
TA = MIN to MAX
TA = 25
°
C
TA = MIN to MAX
MIN
TYP
±
0.6
MAX
±
1
±
1
±
0.75
UNIT
EL
Linearity error integral
Linearity error, integral
fs = 40 MSPS,
VI = 0.6 V to 2.6 V
LSB
ED
Linearity error differential
Linearity error, differential
±
0.3
±
1
Self bias (1), VRB
Self bias (1), VRT
Self bias (2), VRB
Self bias (2), VRT
Reference-voltage current
Short REFB to REFBS
See Figure 13
0.57
0.61
0.65
Short REFT to REFTS
2.47
2.63
2.80
V
Short REFB to AGND
See Figure 14
AGND
Short REFT to REFTS
2.18
2.29
2.4
Iref
Rref
Ci
EZS
EFS
IIH
IIL
IOH
IOL
VI(REFT) – VI(REFB) = 2 V
Between REFT and REFB terminals
5.2
7.5
12
mA
pF
Reference-voltage resistor
165
270
350
Analog input capacitance
VI(ANLG) = 1.5 V + 0.07 Vrms
4
Zero-scale error
VI(REFT) – VI(REFB) = 2 V
VI(REFB)= 2 V
–18
–43
–68
mV
Full-scale error
–25
0
25
High-level input current
VDD = 5.25 V,
VDD = 5.25 V,
OE = GND,
VIH = VDD
VIL = 0
VDD = 4.75 V,
VDD = 4.75 V,
5
μ
A
Low-level input current
5
High-level output current
VOH = VDD–0.5 V
VOL = 0.4 V
–1.5
mA
Low-level output current
OE = GND,
2.5
IOZH(lkg)
High-level
high-impedance-state
output leakage current
OE = VDD,
VDD = 5.25,
VOH = VDD
16
μ
A
IOZL(lkg)
Low-level
high-impedance-state
output leakage current
OE = VDD,
VDD = 4.75,
VOL = 0
16
IDD
Supply current
fs = 40 MSPS,
CL
25 pF,
NTSC ramp wave input,
See Note 2
17
27
mA
Conditions marked MIN or MAX are as stated in recommended operating conditions.
National Television System Committee
NOTE 2: Supply current specification does not include Iref.
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