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參數(shù)資料
| 型號： | TLC386A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | SENSITIVE GATE TRIACS |
| 中文描述： | 靈敏柵極雙向可控硅 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 52K |
| 代理商： | TLC386A |
GATE CHARACTERISTICS
(maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient on printed circuit with Cu surface 1cm2
50
°
C/W
Rth (j-l) DC Junction leads for DC
20
°
C/W
Rth (j-l) AC
Junction leads for 360
°
conduction angle ( F= 50 Hz)
15
°
C/W
Symbol
Test Conditions
Quadrant
Suffix
Unit
T
D
S
A
IGT
VD=12V
(DC)
RL=33
Tj=25
°
C
I-II-III
MAX
5
5
10
10
mA
IV
MAX
5
10
10
25
VGT
VD=12V
(DC)
RL=33
Tj=25
°
C
I-II-III-IV
MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj=110
°
C
I-II-III-IV
MIN
0.2
V
tgt
VD=VDRM
dIG/dt = 0.5A/
μ
s
IG= 40mA
Tj=25
°
C
I-II-III-IV
TYP
2
μ
s
IL
IG= 1.2 IGT
Tj=25
°
C
I-III-IV
MAX
15
15
25
25
mA
II
15
15
25
25
IH*
IT= 100mA gate open
Tj=25
°
C
MAX
15
15
25
25
mA
VTM *
ITM= 4A
tp= 380
μ
s
Tj=25
°
C
MAX
1.85
V
IDRM
IRRM
VDRM
VRRM
Rated
Rated
Tj=25
°
C
MAX
0.01
mA
Tj=110
°
C
MAX
0.75
dV/dt *
Linear
VD=67%VDRM
gate open
slope
up
to
Tj=110
°
C
TYP
10
10
20
20
V/
μ
s
(dV/dt)c *
(dI/dt)c = 1.3A/ms
Tj=110
°
C
TYP
1
1
5
5
V/
μ
s
* For either polarity of electrode A
2
voltage with reference to electrode A
1
.
PG (AV)= 0.1W
PGM= 2W (tp = 20
μ
s)
IGM= 1A (tp = 20
μ
s)
VGM= 16V (tp = 20
μ
s).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TLC116 T/D/S/A ---> TLC386 T/D/S/A
2/5
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PDF描述 |
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| TLC386D | SENSITIVE GATE TRIACS |
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| TLC386T | SENSITIVE GATE TRIACS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TLC386D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SENSITIVE GATE TRIACS |
| TLC386S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SENSITIVE GATE TRIACS |
| TLC386T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SENSITIVE GATE TRIACS |
| TLC393 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:DUAL MICROPOWER LinCMOSE VOLTAGE COMPARATOR |
| TLC393/339 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:FAMILY OF NANNOPOWER PUSH=PULL OUTPUT COMPARATORS |
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