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參數(shù)資料
| 型號： | TLC2932AIPWRG4 |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | PLL合成/DDS/VCOs |
| 英文描述： | PHASE LOCKED LOOP, 38 MHz, PDSO14 |
| 封裝： | GREEN, PLASTIC, TSSOP-14 |
| 文件頁數(shù)： | 21/23頁 |
| 文件大?。?/td> | 531K |
| 代理商： | TLC2932AIPWRG4 |
TLC2932A
HIGH PERFORMANCE PHASE LOCKED LOOP
SLES150 OCTOBER 2005
7
TI.COM
electrical characteristics, VDD = 3.3 V, TA = 25°C (unless otherwise noted)
VCO section
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VOH
High level output voltage
IOH = –2 mA
2.64
V
VOL
Low level output voltage
IOL = 2 mA
0.33
V
VTH
Input threshold voltage at select, VCO inhibit
1.05
1.65
2.25
V
II
Input current at Select, VCO inhibit
VI = VDD or GND
±1
A
ZI(VCOIN)
VCO IN input impedance
VCO IN = 1/2 VDD
10
M
IDD(INH)
VCO supply current (inhibit)
See Note 10
0.38
1
A
IDD(VCO)
VCO supply current
See Note 11
10.8
22
mA
NOTES: 10. Current into VCO VDD, when VCO INHIBIT = high, PFD is inhibited.
11. Current into VCO VDD, when VCO IN = 1/2 VDD, RBIAS = 3.3 k, VCOOUT = 15pF Load, VCO INHIBIT = GND, and PFD INHIBIT
= GND.
PFD section
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VOH
High level output voltage
IOH = –2 mA
2.97
V
VOL
Low level output voltage
IOL = 2 mA
0.2
V
IOZ
High impedance state output current
PFD inhibit = high, VO = VDD or GND
±1
A
VIH
High level input voltage at FinA, FinB
2.1
V
VIL
Low level input voltage at FinA, FinB
0.5
V
VTH
Input threshold voltage at PFD inhibit
1.05
1.65
2.25
CIN
Input capacitance at FinA, FinB
5.6
pF
ZIN
Input impedance at FinA, FinB
10
M
IDD(Z)
High impedance state PFD supply current
See Note 12
1
A
IDD(PFD)
PFD supply current
See Note 13
3
mA
NOTES: 12. The current into LOGIC VDD when FINA and FINB = ground, PFD INHIBIT = VDD, PFD OUT open, and VCO OUT is inhibited.
13. The current into LOGIC VDD when FINA = 1 MHz and FINB = 1 MHz (VI(PP) = 3.3 V, rectangular wave), PFD INHIBIT = GND,
PFD OUT open, and VCO OUT is inhibited.
operation characteristics, VDD = 3.3 V, TA = 25°C (unless otherwise noted)
VCO section
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fOSC
Operation oscillation frequency
RBIAS = 3.3 k, VCO IN = 1/2 VDD
18
30
43
MHz
fstb
Time to stable oscillation (see Note 14)
10
s
tr
Rise time
CL = 15 pF
8.5
14
ns
tf
Fall time
CL = 15 pF
7.3
12
ns
fDUTY
Duty cycle at VCO OUT
RBIAS=3.3 k, VCO IN = 1/2 VDD
45
50
55
%
α (fOSC)
Temperature coefficient of oscillation
frequency
VCO IN = 1/2 VDD, TA = –20°C to 75°C
–0.28
7
%/
°C
kSVS(fOSC)
Supply voltage coefficient of oscillation
frequency
VCO IN = 1/2 VDD, VDD = 4.75 V to 5.25 V
0.004
%/m
V
Jitter absolute (see Note 15)
PLL jitter, N = 128
245
ps
NOTES: 14. The time period to the stable VCO oscillation frequency after the VCO INHIBIT terminal is changed to a low level.
15. Jitter performance is highly dependent on circuit layout and external device characteristics. The jitter specification was made with
a carefully deigned PCB with no device socket.
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