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參數(shù)資料
| 型號： | TL3500H |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | 400 V, 50 A, SILICON SURGE PROTECTOR, DO-201AD |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 45K |
| 代理商： | TL3500H |
TL0640H thru TL3500H
FEATURES
Oxide Glass Passivated Junction
Bidirectional protection in a single device
Surge capabilities up to 100A @ 10/1000us or 400
@ 8/20us
High off state Impedance and low on state voltage
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Denotes none cathode band
Weight : 0.093 grams
SURFACE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
VDRM
-
58 to 320
Volts
-
100
Amperes
IPP
MAXIMUM RATINGS
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM
THERMAL RESISTANCE
℃
/W
℃
/W
UNIT
SYMBOL
%/
℃
Junction to leads
Junction to ambient on print circuit (on recommended pad layout)
CHARACTERISTICS
Typical positive temperature coefficient for brekdown voltage
Rth
(J-L)
Rth
(J-A)
△
V
BR
/
△
T
J
0.1
VALUE
20
100
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
I
PP
(A)
500
400
250
200
160
100
I
P
,
100
50
0
tr
tp
TIME
Half value
Peak value (Ipp)
tr= rise time to peak value
tp= Decay time to half value
SEMICONDUCTOR
LITE-ON
Bi-Directional
UNIT
SYMBOL
℃
Non-repetitive peak impulse current @ 10/1000us
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
CHARACTERISTICS
storage temperature range
I
PP
I
TSM
T
J
T
STG
A
A
-55 to +150
VALUE
100
50
Junction temperature range
-40 to +150
℃
REV. 0, 03-Dec-2001, KDWE01
All Dimensions in millimeter
Max.
-
Min.
25.4
7.30
1.20
4.80
DO-201AD
Dim.
A
B
D
C
9.50
1.30
5.30
DO-201AD
A
C
D
A
B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TL35-0100-012 | 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:TOROIDAL TRANSFORMER |
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| TL35-0100-024 | 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:TOROIDAL TRANSFORMER |
| TL35-0100-030 | 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:TOROIDAL TRANSFORMER |
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