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參數(shù)資料
| 型號(hào)： | TK70D06J1 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Switching Regulator Application |
| 中文描述： | 開關(guān)穩(wěn)壓器的應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 228K |
| 代理商： | TK70D06J1 |
TK70D06J1
2007-02-05
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS
Ⅲ
)
TK70D06J1
Switching Regulator Application
High-Speed switching
Small gate charge: Q
g
= 87nC (typ.)
Low drain-source ON resistance: R
DS (ON)
= 5.1 m
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 80S
Low leakage current: I
DSS
= 10
μ
A (max) (V
DS
= 60 V)
Enhancement-mode: V
th
= 1.1~2.3 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
60
V
Drain-gate voltage (R
GS
=
20 k
Ω
)
V
DGR
60
V
Gate-source voltage
V
GSS
±
20
V
DC
(Note 1)
I
D
70
Drain current
Pulse
(Note 1)
I
DP
280
A
Drain power dissipation (Tc
=
25°C)
P
D
140
W
Single pulse avalanche energy
(Note 2)
E
AS
751
mJ
Avalanche current
I
AR
70
A
Repetitive avalanche energy (Note 3)
E
AR
10.3
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
0.89
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
83.3
°C/W
Note 1: Ensure that the channel & lead temperature does not exceed 150°C.
Note 2: V
DD
=
25 V, T
ch
=
25°C, L
=
200
μ
H, I
AR
=
70 A, R
G
=
1
Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
-
JEITA
-
TOSHIBA
2-10V1A
Weight: 1.35 g (typ.)
1
3
2
Internal Connection
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