參數(shù)資料
型號(hào)： TK13H90A1
廠商： Toshiba Corporation
英文描述： Swiching Regulator Applications
中文描述： 交換技術(shù)穩(wěn)壓器應(yīng)用
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 245K
代理商： TK13H90A1
TK13H90A1
2006-11-13
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type(MACH
Ⅱ
π
-MOSIV)
TK13H90A1
Swiching Regulator Applications
z
Low drain
source ON resistance
z
High forward transfer admittance
z
Low leakage current
z
Enhancement mode
Absolute Maximum Ratings
(Ta = 25°C)
: R
DS
(ON)
= 0.78
Ω
(typ.)
: |Y
fs
| = 11S (typ.)
: I
DSS
= 100
μ
A (max) (V
DS
= 720V)
: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Characteristics
Symbol
Rating
Unit
Drain
source voltage
V
DSS
900
V
Drain
gate voltage (R
GS
= 20 k
)
V
DGR
900
V
Gate
source voltage
V
GSS
±30
V
DC
(Note 1)
I
D
13
A
Drain current
Pulse (Note 1)
I
DP
39
A
Drain power dissipation (Tc = 25°C)
P
D
150
W
Single pulse avalanche energy
(Note 2)
E
AS
491
mJ
Avalanche current
I
AR
13
A
Repetitive avalanche energy (Note 3)
E
AR
15
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch
c)
0.833
°C / W
Thermal resistance, channel to
ambient
R
th (ch
a)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 5.3 mH, R
G
= 25
, I
AR
= 13 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1: GATE
2: DRAIN (HEAT SINK)
3: SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16K1A
Weight: 3.8 g (typ.)
1
3
2
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