參數(shù)資料
型號(hào): TISPPBL2SDR
廠商: Power Innovations International, Inc.
英文描述: PROGRAMMABLE OVERVOLTAGE PROTECTORS FOR ERICSSON COMPONENTS PBL 3xxx SLICS
中文描述: 愛立信元件博亞可編程過電壓保護(hù)3xxx系列SLIC組件
文件頁數(shù): 3/15頁
文件大?。?/td> 293K
代理商: TISPPBL2SDR
3
AUGUST 1999
TISPPBL2SD
PROGRAMMABLE OVERVOLTAGE PROTECTORS
FOR ERICSSON COMPONENTS PBL 3xxx SLICS
P R O D U C T I N F O R M A T I O N
V
(BO)
Breakover voltage
I
T
= -20 A, 0.5/700 generator, Figure 3 test circuit (See Note 3 and
Figure 2)
-70
V
t
(BR)
Breakdown time
I
T
= -20 A, 0.5/700 generator, Figure 3 test cir-
cuit (See Note 3 and Figure 2)
V
(BR)
< -50 V
1
μs
V
F
Forward voltage
I
F
= 5 A, t
w
= 500 μs
I
F
= 20 A, 0.5/700 generator, Figure 3 test circuit (See Note 4 and Fig-
ure 2)
3
V
V
FRM
Peak forward recovery
voltage
8
V
t
FR
Forward recovery time
I
F
= 20 A, 0.5/700 generator, Figure 3 test cir-
cuit (See Note 4 and Figure 2)
V
F
> 5 V
V
F
> 1 V
1
10000
μs
I
H
Holding current
I
T
= -1 A, di/dt = 1A/ms, V
GG
= -50 V, -40 °C
T
J
85 °C
-150
mA
I
GAS
Gate reverse current
V
GG
= V
GKRM
, V
AK
= 0
T
J
= -40 °C
T
J
= 85 °C
-5
μA
-50
μA
I
GAT
Gate reverse current,
on state
I
T
= -0.5 A, t
w
= 500 μs, V
GG
= -50 V
-1
mA
I
GAF
Gate reverse current,
forward conducting
state
I
F
= 1 A, t
w
= 500 μs, V
GG
= -50 V
-10
mA
I
GT
V
GT
Gate trigger current
I
T
= -5 A, t
p(g)
20 μs, V
GG
= -50 V
I
T
= -5 A, t
p(g)
20 μs, V
GG
= -50 V
5
mA
Gate trigger voltage
2.5
V
C
AK
Anode-cathode off-
state capacitance
f = 1 MHz, V
d
= 1 V, I
G
= 0, (see Note 5)
V
D
= -3 V
V
D
= -50 V
110
pF
60
pF
NOTES: 3. For the required TIPX and RINGX terminal negative pulse performance refer to the respective Ericsson Components SLIC data
sheet. The PBL 379x family of SLICs has ratings of -120 V for 0.25 μs, -90 V for 1 μs, -70 V for 10 ms and -70 V for d.c. The PBL
376x family together with the PBL 3860A SLIC have the same maximum ratings when the applied battery voltage is -50 V. As the
FLEXI-SLIC PBL 386 xx family is specified in terms of current pulses, a minimum value of 2
for R
P
should be used.
Compliance to these conditions is guaranteed by the maximum breakover voltage and the breakdown times of the TISPPBL2S.
4. For the required TIPX and RINGX terminal positive pulse performance refer to the respective Ericsson Components SLIC data
sheet. The PBL 379x family of SLICs has ratings of 15 V for 0.25 μs, 10 V for 1 μs, 5 V for 10 ms and 1 V for d.c. The PBL 376x
family together with the PBL 3860A SLIC have similar ratings. As the FLEXI-SLIC PBL 386 xx family is specified in terms of
current pulses, a minimum value of 2
for R
P
should be used. Compliance to these conditions is guaranteed by the peak forward
recovery voltage and the forward recovery times of the TISPPBL2S
5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
thermal characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R
θ
JA
Junction to free air thermal resistance
P
tot
= 0.8 W, T
A
= 25 °C
5 cm
2
, FR4 PCB
D Package
160
°C/W
electrical characteristics, T
amb
= 25 °C (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
相關(guān)PDF資料
PDF描述
TK10415 CERAMIC SPEAKER DRIVE AMPLIFIER
TK10415M CERAMIC SPEAKER DRIVE AMPLIFIER
TK10415MTL CERAMIC SPEAKER DRIVE AMPLIFIER
TK10415TL CERAMIC SPEAKER DRIVE AMPLIFIER
TK10416 DYNAMIC SPEAKER DRIVE AMPLIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISPPBL2SDR-S 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL2SE 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL2SE-S 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL3 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL3D 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube