參數(shù)資料
型號(hào)： TISPPBL1D
廠商： Power Innovations International, Inc.
英文描述： DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
中文描述： 雙遠(yuǎn)期導(dǎo)電的P -門晶閘管愛(ài)立信成分SLIC組件
文件頁(yè)數(shù)： 8/19頁(yè)
文件大小： 364K
代理商： TISPPBL1D
TISPPBL1D, TISPPBL1P TISPPBL2D, TISPPBL2P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
FOR ERICSSON COMPONENTS SLICS
AUGUST 1997 - REVISED DECEMBER 1999
8
P R O D U C T I N F O R M A T I O N
APPLICATIONS INFORMATION
operation of gated protectors
The following SLIC circuit definitions are used in this data sheet:
V
BAT
— Package pin label for the battery supply voltage.
V
Bat
— Voltage applied to the V
BAT
pin.
V
B
— Negative power supply voltage applied to the V
BAT
pin via an isolation diode. This voltage is also the
gate reference voltage, V
GG
, of the TISPPBLx. When the isolation diode, D1, is conducting, then
V
Bat
= V
B
+ 0.7.
The isolation diode, D1 in Figure 13, is to prevent a damaging current flowing into the SLIC substrate (V
BAT
pin) if the V
Bat
voltage becomes more negative than the V
B
supply during a negative overvoltage condition.
Each SLIC needs an isolation diode from the V
B
voltage supply.
Figure 13 and Figure 14 show how the TISPPBLx limits overvoltages. The TISPPBLx thyristor sections limit
negative overvoltages and the diode sections limit positive overvoltages.
Negative overvoltages (Figure 13) are initially clipped close to the SLIC negative supply rail value (V
B
) by the
conduction of the transistor base-emitter and the thyristor gate-cathode junctions. If sufficient current is
available from the overvoltage, then the thyristor will crowbar into a low voltage ground referenced on-state
condition. As the overvoltage subsides the high holding current of the crowbar thyristor prevents d.c. latchup.
TYPICAL CHARACTERISTICS
Figure 11
Figure 12
CUMULATIVE POPULATION %
vs
LIMITING TIME
t
(BR)
, t
FR
- Breakdown and Forward Recovery Times - μs
0.001
0.01
0.1
1
C
0·001
0·01
0·1
1
10
30
50
70
90
99
99·9
99·99
99·999
TC6XAC
50 devices tested from 10 wafer lots
I
F
= 20 A, I
T
= -20 A, 0.5/700 Waveform
T
A
= 25°C, V
GG
= -50 V
THYRISTOR t
(BR)
for V
(BR)
< V
GG
DIODE t
FR
for V
F
> 5 V
Outliers
(2) @ 0 μs
0.004
0.04
0.4
NORMALISED PEAK LIMITING VOLTAGES
vs
JUNCTION TEMPERATURE
1.10
Normalised to 25°C values
of V
(BO)
and V
FRM
I
F
= 20 A, I
T
= -20 A
0.5/700 Waveform
V
GG
= -50 V
T
J
- Junction Temperature - °C
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80
N
0.90
0.95
1.00
1.05
TC6XAA
THYRISTOR
V
(BO)
DIODE
V
FRM
相關(guān)PDF資料
PDF描述
TISPPBL1P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
TISPPBL2D DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
TISPPBL2P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS
TISPPBL2SD PROGRAMMABLE OVERVOLTAGE PROTECTORS FOR ERICSSON COMPONENTS PBL 3xxx SLICS
TISPPBL2SDR PROGRAMMABLE OVERVOLTAGE PROTECTORS FOR ERICSSON COMPONENTS PBL 3xxx SLICS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TISPPBL1DR 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL1DR-S 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL1D-S 功能描述:SCR SURGE SUP 8-SOP RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL1P 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
TISPPBL1P-S 功能描述:SCR RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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